© Semiconductor Components Industries, LLC, 2013

September, 2013 − Rev. 1

1

Publication Order Number:

NJW21193/D

NJW21193G (PNP)

NJW21194G (NPN)

Silicon Power Transistors

The NJW21193G and NJW21194G utilize Perforated Emitter

technology and are specifically designed for high power audio output,

disk head positioners and linear applications.

Features

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

250

Vdc

Collector−Base Voltage

400

Vdc

Emitter−Base Voltage

5.0

Vdc

Collector−Emitter Voltage − 1.5 V

400

Vdc

Collector Current − Continuous

16

Adc

Collector Current − Peak (Note 1)

30

Adc

Base Current − Continuous

5.0

Adc

Derate Above 25°C

200

1.6

W

W/°C

Operating and Storage Junction

Temperature Range

− 65 to

+150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance,

Junction−to−Case

0.625

°C/W

Thermal Resistance,

Junction−to−Ambient

40

°C/W

16 AMPERES

COMPLEMENTARY SILICON

POWER TRANSISTORS

250 VOLTS, 200 WATTS

http://onsemi.com

Device

Package

Shipping

ORDERING INFORMATION

TO−3P

CASE 340AB

STYLES 1,2,3

MARKING

DIAGRAM

NJW21194G

TO−3P

(Pb−Free)

30 Units/Rail

NJW21193G

TO−3P

(Pb−Free)

30 Units/Rail

NJW2119xG

AYWW

x

= 3 or 4

G

= Pb−Free Package

A

= Assembly Location

Y

= Year

WW

= Work Week

1

2

3

4

12

3

1

BASE

EMITTER 3

COLLECTOR 2, 4

1

BASE

EMITTER 3

COLLECTOR 2, 4

PNP

NPN