NSS12200L datasheet(3/5 Pages) ONSEMI

Part #	NSS12200L

Description	PNP Transistor

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NSS12200L

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TYPICAL CHARACTERISTICS

−55°C

VCE(sat) = 150°C

IC/IB = 10

25°C

Figure 1. Collector Emitter Saturation Voltage

vs. Collector Current

Figure 2. Collector Emitter Saturation Voltage

vs. Collector Current

IC, COLLECTOR CURRENT (A)

10

1.0

0.1

0.01

0.001

0

0.05

0.1

0.15

0.2

0.25

Figure 3. DC Current Gain vs. Collector

Current

Figure 4. Base Emitter Saturation Voltage vs.

Collector Current

IC, COLLECTOR CURRENT (A)

10

1.0

0.1

0.01

0.001

100

150

300

350

500

700

750

800

10

1.0

0.1

0.01

0.001

0.3

0.4

0.5

0.6

0.7

0.8

1.0

1.1

Figure 5. Base Emitter Turn−On Voltage vs.

Collector Current

Figure 6. Saturation Region

IC, COLLECTOR CURRENT (A)

IB, BASE CURRENT (mA)

10

1.0

0.1

0.01

0.001

0.1

0.2

0.3

0.4

0.5

0.8

0.9

1.0

100

10

1.0

0.1

0.01

0

0.2

0.4

0.6

0.8

1.0

IC/IB = 100

25°C

−55°C

IC, COLLECTOR CURRENT (A)

10

1.0

0.1

0.01

0.001

0

0.05

0.1

0.15

0.2

0.35

VCE(sat) = 150°C

0.25

0.3

650

600

550

200

250

400

450

0.9

150°C (5.0 V)

150°C (2.0 V)

25°C (5.0 V)

25°C (2.0 V)

−55°C (5.0 V)

−55°C (2.0 V)

25°C

−55°C

150°C

0.6

0.7

25°C

−55°C

150°C

VCE = −2.0 V

VCE (V) IC = 500 mA

300 mA

10 mA

100 mA

IC/IB = 10

Similar Part No. - NSS12200L

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ON Semiconductor	NSS12200LT1G	102Kb / 5P	12 V, 4.0 A, Low VCE(sat) PNP Transistor September, 2006 ??Rev. 0
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