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NSV1C200LT1G Datasheet(PDF) 2 Page - ON Semiconductor |
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NSV1C200LT1G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 6 page NSS1C200L, NSV1C200L www.onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (IC = −10 mAdc, IB = 0) V(BR)CEO −100 Vdc Collector−Base Breakdown Voltage (IC = −0.1 mAdc, IE = 0) V(BR)CBO −140 Vdc Emitter−Base Breakdown Voltage (IE = −0.1 mAdc, IC = 0) V(BR)EBO −7.0 Vdc Collector Cutoff Current (VCB = −140 Vdc, IE = 0) ICBO −100 nAdc Emitter Cutoff Current (VEB = −6.0 Vdc) IEBO −50 nAdc ON CHARACTERISTICS DC Current Gain (Note 3) (IC = −10 mA, VCE = −2.0 V) (IC = −500 mA, VCE = −2.0 V) (IC = −1.0 A, VCE = −2.0 V) (IC = −2.0 A, VCE = −2.0 V) hFE 150 120 80 50 240 360 Collector−Emitter Saturation Voltage (Note 3) (IC = −0.1 A, IB = −0.01 A) (IC = −0.5 A, IB = −0.05 A) (IC = −1.0 A, IB = −0.100 A) (IC = −2.0 A, IB = −0.200 A) VCE(sat) −0.040 −0.080 −0.115 −0.250 V Base −Emitter Saturation Voltage (Note 3) (IC = −1.0 A, IB = −0.100 A) VBE(sat) −0.950 V Base −Emitter Turn−on Voltage (Note 3) (IC = −1.0 A, VCE = −2.0 V) VBE(on) −0.850 V Cutoff Frequency (IC = −100 mA, VCE = −5.0 V, f = 100 MHz) fT 120 MHz Input Capacitance (VEB = 2.0 V, f = 1.0 MHz) Cibo 200 pF Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo 22 pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. 0.60 0.50 0.40 0.30 0.20 0.10 0 0 20 160 40 60 140 120 100 80 TA, AMBIENT TEMPERATURE (°C) Figure 1. Power Derating Note 2 Note 1 |
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