NSV1C200LT1G datasheet(2/6 Pages) ONSEMI

Part #	NSV1C200LT1G

Description	PNP Transistor

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Manufacturer	ONSEMI [ON Semiconductor]

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NSS1C200L, NSV1C200L

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(IC = −10 mAdc, IB = 0)

V(BR)CEO

−100

Vdc

Collector−Base Breakdown Voltage

(IC = −0.1 mAdc, IE = 0)

V(BR)CBO

−140

Vdc

Emitter−Base Breakdown Voltage

(IE = −0.1 mAdc, IC = 0)

V(BR)EBO

−7.0

Vdc

Collector Cutoff Current

(VCB = −140 Vdc, IE = 0)

ICBO

−100

nAdc

Emitter Cutoff Current

(VEB = −6.0 Vdc)

IEBO

−50

nAdc

ON CHARACTERISTICS

DC Current Gain (Note 3)

(IC = −10 mA, VCE = −2.0 V)

(IC = −500 mA, VCE = −2.0 V)

(IC = −1.0 A, VCE = −2.0 V)

(IC = −2.0 A, VCE = −2.0 V)

hFE

150

120

80

50

240

360

Collector−Emitter Saturation Voltage (Note 3)

(IC = −0.1 A, IB = −0.01 A)

(IC = −0.5 A, IB = −0.05 A)

(IC = −1.0 A, IB = −0.100 A)

(IC = −2.0 A, IB = −0.200 A)

VCE(sat)

−0.040

−0.080

−0.115

−0.250

V

Base −Emitter Saturation Voltage (Note 3)

(IC = −1.0 A, IB = −0.100 A)

VBE(sat)

−0.950

V

Base −Emitter Turn−on Voltage (Note 3)

(IC = −1.0 A, VCE = −2.0 V)

VBE(on)

−0.850

V

Cutoff Frequency

(IC = −100 mA, VCE = −5.0 V, f = 100 MHz)

fT

120

MHz

Input Capacitance (VEB = 2.0 V, f = 1.0 MHz)

Cibo

200

pF

Output Capacitance (VCB = 10 V, f = 1.0 MHz)

Cobo

22

pF

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.

0.60

0.50

0.40

0.30

0.20

0.10

0

20

160

40

60

140

120

100

80

TA, AMBIENT TEMPERATURE (°C)

Figure 1. Power Derating

Note 2

Note 1

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