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NSS1C201LT1G Datasheet(PDF) 1 Page - ON Semiconductor |
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NSS1C201LT1G Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 6 page © Semiconductor Components Industries, LLC, 2008 October, 2016 − Rev. 6 1 Publication Order Number: NSS1C201L/D NSS1C201L, NSV1C201L 100 V, 3.0 A, Low VCE(sat) NPN Transistor ON Semiconductor’s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. Features • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Collector-Emitter Voltage VCEO 100 Vdc Collector-Base Voltage VCBO 140 Vdc Emitter-Base Voltage VEBO 7.0 Vdc Collector Current − Continuous IC 2.0 A Collector Current − Peak ICM 3.0 A THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 1) 490 3.7 mW mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 1) 255 °C/W Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 2) 710 4.3 mW mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 2) 176 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−4 @ 100 mm2, 1 oz. copper traces. 2. FR−4 @ 500 mm2, 1 oz. copper traces. Device Package Shipping† ORDERING INFORMATION NSS1C201LT1G, NSV1C201LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel MARKING DIAGRAM COLLECTOR 3 1 BASE 2 EMITTER SOT−23 (TO−236) CASE 318 STYLE 6 3 2 1 www.onsemi.com 100 VOLTS, 3.0 AMPS NPN LOW VCE(sat) TRANSISTOR †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 VT MG G VT = Specific Device Code M = Date Code* G = Pb−Free Package *Date Code orientation and/or overbar may vary depending upon manufacturing location. (Note: Microdot may be in either location) |
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