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ZRA400R02 Datasheet(PDF) 2 Page - Zetex Semiconductors |
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ZRA400R02 Datasheet(HTML) 2 Page - Zetex Semiconductors |
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2 / 5 page  ABSOLUTE MAXIMUM RATING Reverse Current 25mA Forward Current 25mA Operating Temperature -40 to 85°C Storage Temperature -55 to 125°C Power Dissipation (Tamb=25°C) SOT23 330mW E-Line, 3 pin (TO92) 500mW E-Line, 2 pin (TO92) 500mW SO8 625mW ELECTRICAL CHARACTERISTICS TEST CONDITIONS (Unless otherwise stated) Tamb=25°C SYMBOL PARAMETER CONDITIONS LIMITS TOL. % UNITS MIN TYP MAX VR Reverse Breakdown Voltage IR=150µA 4.05 4.01 3.97 4.096 4.096 4.096 4.14 4.18 4.22 1 2 3 V IMIN Minimum Operating Current 25 50 µA IR Recommended Operating Current 0.05 5 mA TC Average Reverse Breakdown Voltage Temp. Co. IR(min) to IR(max) 15 50 ppm/°C RS § Slope Resistance 0.55 2 Ω ZR Reverse Dynamic Impedance IR =1mA f = 100Hz IAC= 0.1 IR 0.5 1.2 Ω TC = VR Change x 1000000 VR x Temperature Change § RS = V R Change(IR (min) to IR (max)) IR ( max) − IR (min) 1 - 35 ZRA400 ZRA400 1 - 34 0 Reverse Characteristics Reverse Voltage (V) 0 10 20 30 50 4.0 2.0 40 T)=25°C T)=-40°C T)=85°C 4.06 4.10 4.08 TYPICAL CHARACTERISTICS Temperature (°C) Reference Current (mA) Frequency (kHz) Temperature Drift Slope Resistance v Current Time (µs) 110 0.1 Slope Resistance v Frequency -40 -20 0 20 40 60 80 Forward Characteristics Forward Current (mA) 0.1 1 10 100 1000 IR=150µAto 5mA 0 2.0 4.0 1 0.1 10 100 1000 10 100 1 0.1 0.01 0 1000 2000 0 10 0 2.0 4.0 01 2 3 4 Time (µs) I4=150µA I4=1mA I4=5mA 0.4 0.6 0.8 1.0 1.2 1.4 1.6 TA=25°C TA=-40°C TA=85°C 0 10 0 2.0 4.0 Transient Response (Single Pulse) Transient Response (Repetitive Pulse) INPUT OUTPUT 40K 150µA 5mA 150 µA 1K2 5mA INPUT OUTPUT 40K 150µA 5mA 150 µA 1K2 5mA IN R IN R |
Similar Part No. - ZRA400R02 |
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Similar Description - ZRA400R02 |
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