W963A6BBN80E datasheet(3/29 Pages) WINBOND

Part #	W963A6BBN80E

Description	512K WORD X 16 BIT LOW POWER PSEUDO SRAM

Download	29 Pages

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Manufacturer	WINBOND [Winbond]

Direct Link	http://www.winbond.com

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W963A6BBN

1. GENERAL DESCRIPTION

W963A6BBN is a 8M bits CMOS pseudo static random access memory (Pseudo SRAM), organized

as 512K words x 16 bits. Using advanced single transistor DRAM architecture and 0.175

µm process

technology; W963L6BBN delivers fast access cycle time and low power consumption. It is suitable for

mobile device application such as Cellular Phone and PDA, which high-density buffer is needed and

power dissipation is most concerned.

2. FEATURES

•

Asynchronous SRAM interface

•

Fast access cycle time:

− tRC = 70 nS (-70), 80 nS (-80)

•

Low power consumption:

− IDDA1 = 20 mA Max.

− IDDS1 = 70 µA Max.

•

Byte write control

•

Power supply:

− VDD = +2.7V to +3.3V

•

Temperature:

− TA = 0°C to +70°C

− TA = -25°C to +85°C (Extended temperature)

− TA = -40°C to +85°C (Industrial temperature)

3. PRODUCT OPTIONS

PARAMETER

W963A6BBN70

W963A6BBN80

tRC

70 nS Min.

80 nS Min.

IDDS1

70

µA Max.

70

µA Max.

IDDA1

20 mA

VDD

2.7V to 3.3V

Publication Release Date: March 10, 2003

- 3 -

Revision A1

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