Manufacturer | Part # | Datasheet | Description |
Toshiba Semiconductor |
TPC8403
|
309Kb / 11P |
Field Effect Transistor Silicon P/N Channel MOS Type (P Channel U-MOSII/N Channel U-MOSII)
|
SSM3J13T
|
205Kb / 6P |
Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
|
TPC8303
|
520Kb / 7P |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
|
SSM6J08FU
|
162Kb / 6P |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
|
SSM3J13T
|
182Kb / 6P |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
|
SSM3J14T
|
179Kb / 6P |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
|
SSM5G02TU
|
226Kb / 10P |
Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode
|
TPC8401
|
750Kb / 11P |
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (U-MOSII)
|
TPC8402
|
719Kb / 11P |
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (MOSVI/U-MOSII)
|
TPC8105-H
|
475Kb / 7P |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII)
|