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DRV8886AT Datasheet(PDF) 7 Page - Texas Instruments |
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DRV8886AT Datasheet(HTML) 7 Page - Texas Instruments |
7 / 40 page 7 DRV8886AT www.ti.com SLVSDO1 – JANUARY 2017 Product Folder Links: DRV8886AT Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated Electrical Characteristics (continued) at TA = -40 to 125°C, VVM = 8 to 37 V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT MOTOR DRIVER OUTPUTS (AOUT1, AOUT2, BOUT1, BOUT2) RDS(ON) High-side FET on resistance VM = 24 V, I = 1.4 A, TA = 25°C 290 346 m Ω RDS(ON) Low-side FET on resistance VM = 24 V, I = 1.4 A, TA = 25°C 260 320 m Ω tRISE (1) Output rise time 100 ns tFALL (1) Output fall time 100 ns tDEAD (1) Output dead time 200 ns Vd (1) Body diode forward voltage IOUT = 0.5 A 0.7 1 V PWM CURRENT CONTROL (RREF) ARREF RREF transimpedance gain 28.1 30 31.9 kA Ω VRREF RREF voltage RREF = 18 to 132 k Ω 1.18 1.232 1.28 V tOFF PWM off-time 20 μs CRREF Equivalent capacitance on RREF 10 pF tBLANK PWM blanking time IRREF = 2.0 A, 63% to 100% current setting 1.5 µs IRREF = 2.0 A, 0% to 63% current setting 1 ΔITRIP Current trip accuracy IRREF = 1.5 A, 10% to 20% current setting, 1% reference resistor –15% 15% IRREF = 1.5 A, 20% to 63% current setting, 1% reference resistor –10% 10% IRREF = 1.5 A, 71% to 100% current setting, 1% reference resistor –6.25% 6.25% PROTECTION CIRCUITS VUVLO VM UVLO VM falling, UVLO report 7 7.8 V VM rising, UVLO recovery 7.2 8 VUVLO,HYS Undervoltage hysteresis Rising to falling threshold 200 mV VCPUV Charge pump undervoltage VCP falling; CPUV report VM + 2 V IOCP Overcurrent protection trip level Current through any FET 3 A tOCP (1) Overcurrent deglitch time 1.3 1.9 2.8 μs tRETRY Overcurrent retry time 1 1.6 ms TTSD (1) Thermal shutdown temperature Die temperature TJ 150 °C THYS (1) Thermal shutdown hysteresis Die temperature TJ 20 °C |
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