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ADS7029QDCURQ1 Datasheet(PDF) 4 Page - Texas Instruments |
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ADS7029QDCURQ1 Datasheet(HTML) 4 Page - Texas Instruments |
4 / 32 page 4 ADS7029-Q1 SBAS811 – JANUARY 2017 www.ti.com Product Folder Links: ADS7029-Q1 Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 6 Specifications 6.1 Absolute Maximum Ratings (1) MIN MAX UNIT AVDD to GND –0.3 3.9 V DVDD to GND –0.3 3.9 V AINP to GND –0.3 AVDD + 0.3 V AINM to GND –0.3 0.3 V Digital input voltage to GND –0.3 DVDD + 0.3 V Storage temperature, Tstg –60 150 °C (1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification. 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) ±2000 V Charged-device model (CDM), per AEC Q100-011 ±1000 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT AVDD Analog supply voltage range 2.35 3.6 V DVDD Digital supply voltage range 1.65 3.6 V TA Operating free-air temperature –40 125 °C (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 6.4 Thermal Information THERMAL METRIC(1) ADS7029-Q1 UNIT DCU (VSSOP) 8 PINS RθJA Junction-to-ambient thermal resistance 181.8 °C/W RθJC(top) Junction-to-case (top) thermal resistance 50.8 °C/W RθJB Junction-to-board thermal resistance 73.9 °C/W ψJT Junction-to-top characterization parameter 1.0 °C/W ψJB Junction-to-board characterization parameter 73.9 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W |
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