MJH11020G datasheet(3/8 Pages) ONSEMI

Part #	MJH11020G

Description	Complementary Darlington Silicon Power Transistors

Download	8 Pages

Scroll/Zoom	100%

Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

Logo

3 / 8 page

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)

www.onsemi.com

3

160

0

TC, CASE TEMPERATURE (°C)

40

60

100

120

160

80

140

20

Figure 1. Power Derating

0

20

40

60

80

100

140

120

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 2)

(IC = 0.1 Adc, IB = 0)

MJH11017, MJH11018

MJH11019, MJH11020

MJH11021, MJH11022

VCEO(sus)

150

200

250

−

Vdc

Collector Cutoff Current

(VCE = 75 Vdc, IB = 0)

MJH11017, MJH11018

(VCE = 100 Vdc, IB = 0)

MJH11019, MJH11020

(VCE = 125 Vdc, IB = 0)

MJH11021, MJH11022

ICEO

−

1.0

mAdc

Collector Cutoff Current

(VCE = Rated VCB, VBE(off) = 1.5 Vdc)

(VCE = Rated VCB, VBE(off) = 1.5 Vdc, TJ = 150_C)

ICEV

−

0.5

5.0

mAdc

Emitter Cutoff Current (VBE = 5.0 Vdc IC = 0)

IEBO

−

2.0

mAdc

ON CHARACTERISTICS (Note 2)

DC Current Gain

(IC = 10 Adc, VCE = 5.0 Vdc)

(IC = 15 Adc, VCE = 5.0 Vdc)

hFE

400

100

15,000

−

Collector−Emitter Saturation Voltage

(IC = 10 Adc, IB = 100 mA)

(IC = 15 Adc, IB = 150 mA)

VCE(sat)

−

2.5

4.0

Vdc

Base−Emitter On Voltage (IC = 10 A, VCE = 5.0 Vdc)

VBE(on)

−

2.8

Vdc

Base−Emitter Saturation Voltage (IC = 15 Adc, IB = 150 mA)

VBE(sat)

−

3.8

Vdc

DYNAMIC CHARACTERISTICS

Current−Gain Bandwidth Product (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)

fT

3.0

−

Output Capacitance

MJH11018, MJH11020, MJH11022

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

MJH11017, MJH11019, MJH11021

Cob

−

400

600

pF

Small−Signal Current Gain (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)

hfe

75

−

SWITCHING CHARACTERISTICS

Typical

Characteristic

Symbol

NPN

PNP

Unit

Delay Time

(VCC = 100 V, IC = 10 A, IB = 100 mA

VBE(off) = 5.0 V) (See Figure 2)

td

150

75

ns

Rise Time

tr

1.2

0.5

ms

Storage Time

ts

4.4

2.7

ms

Fall Time

tf

2.5

ms

2. Pulse Test: Pulse Width = 300

ms, Duty Cycle v 2.0%.

Similar Part No. - MJH11020G

Manufacturer	Part #	Datasheet	Description
ON Semiconductor	MJH11020G	86Kb / 6P	15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150??50 VOLTS, 150 WATTS July, 2006 ??Rev. 6

More results

Similar Description - MJH11020G

Manufacturer	Part #	Datasheet	Description
STMicroelectronics	MJ2501	70Kb / 4P	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
	MJD112	84Kb / 6P	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
	BDX87C	70Kb / 4P	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
	SGSD100	894Kb / 6P	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS October 2003
	TIP122FP	29Kb / 4P	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
	TIP140	48Kb / 4P	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
ON Semiconductor	TIP100	218Kb / 6P	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 1995 REV 7
ON Semiconductor	MJ11017	235Kb / 6P	DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 1995
STMicroelectronics	BDW83C	67Kb / 4P	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
STMicroelectronics	BDX53B	80Kb / 6P	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
Boca Semiconductor Corp...	2N6298	184Kb / 4P	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

More results

MJH11020G Datasheet(PDF) 3 Page - ON Semiconductor

MJH11020G Datasheet(HTML) 3 Page - ON Semiconductor

Similar Part No. - MJH11020G

Similar Description - MJH11020G

Html Pages

1 2 3 4 5 6 7 8

Datasheet Download

Link URL