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MC74HCTXXXADW Datasheet(PDF) 2 Page - Motorola, Inc |
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MC74HCTXXXADW Datasheet(HTML) 2 Page - Motorola, Inc |
2 / 7 page MC54/74HCT241A MOTOROLA High–Speed CMOS Logic Data DL129 — Rev 6 2 MAXIMUM RATINGS* Symbol Parameter Value Unit VCC DC Supply Voltage (Referenced to GND) – 0.5 to + 7.0 V Vin DC Input Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V Vout DC Output Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V Iin DC Input Current, per Pin ± 20 mA Iout DC Output Current, per Pin ± 35 mA ICC DC Supply Current, VCC and GND Pins ± 75 mA PD Power Dissipation in Still Air, Plastic or Ceramic DIP† SOIC Package† 750 500 mW Tstg Storage Temperature – 65 to + 150 _C TL Lead Temperature, 1 mm from Case for 10 Seconds (Plastic DIP or SOIC Package) (Ceramic DIP) 260 300 _C * Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the Recommended Operating Conditions. †Derating — Plastic DIP: – 10 mW/ _C from 65_ to 125_C Ceramic DIP: – 10 mW/ _C from 100_ to 125_C SOIC Package: – 7 mW/ _C from 65_ to 125_C For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D). RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit VCC DC Supply Voltage (Referenced to GND) 4.5 5.5 V Vin, Vout DC Input Voltage, Output Voltage (Referenced to GND) 0 VCC V TA Operating Temperature, All Package Types – 55 + 125 _C tr, tf Input Rise and Fall Time (Figure 1) 0 500 ns DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND) Sb l P T C di i V Guaranteed Limit Ui Symbol Parameter Test Conditions VCC V – 55 to 25 _C v 85_C v 125_C Unit VIH Minimum High–Level Input Voltage Vout = 0.1 V or VCC – 0.1 V |Iout| v 20 µA 4.5 5.5 2 2 2 2 2 2 V VIL Maximum Low–Level Input Voltage Vout = 0.1 V or VCC – 0.1 V |Iout| v 20 µA 4.5 5.5 0.8 0.8 0.8 0.8 0 8 0.8 V VOH Minimum High–Level Output Voltage Vin = VIH or VIL |Iout| v 20 µA 4.5 5.5 4.4 5.4 4.4 5.4 4.4 5.4 V Vin = VIH or VIL |Iout| v 6 mA 4.5 3.98 3.84 3.7 VOL Maximum Low–Level Output Voltage Vin = VIH or VIL |Iout| v 20 µA 4.5 5.5 0.1 0.1 0.1 0.1 0.1 0.1 V Vin = VIH or VIL |Iout| v 6 mA 4.5 0.26 0.33 0.4 Iin Maximum Input Leakage Current Vin = VCC or GND 5.5 ± 0.1 ± 1.0 ± 1.0 µA IOZ Maximum Three–State Leakage Current Output in High–Impedance State Vin = VIL or VIH Vout = VCC or GND 5.5 ± 0.5 ± 5.0 ± 10 µA ICC Maximum Quiescent Supply Current (per Package) Vin = VCC or GND Iout = 0 µA 5.5 4 40 160 µA This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high–impedance cir- cuit. For proper operation, Vin and Vout should be constrained to the range GND v (Vin or Vout) v VCC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open. |
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