6.42

IDT70T3519/99/89S

High-Speed 2.5V 256/128/64K x 36 Dual-Port Synchronous Static RAM

Industrial and Commercial Temperature Ranges

9

Symbol

Rating

Commercial

& Industrial

Unit

with Respect to GND

-0.5 to 3.6

V

with Respect to GND

V

(INPUTS and I/O's)

Input and I/O Terminal

Voltage with Respect to GND

V

Temperature Under Bias

-55 to +125

o

C

Storage Temperature

-65 to +150

o

C

Junction Temperature

+150

o

C

50

mA

40

mA

5666 tbl 06

NOTES:

1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause

permanent damage to the device. This is a stress rating only and functional operation of the

device at these or any other conditions above those indicated in the operational sections

of this specification is not implied. Exposure to absolute maximum rating conditions for

extended periods may affect reliability.

2. This is a steady-state DC parameter that applies after the power supply has reached its

nominal operating value. Power sequencing is not necessary; however, the voltage on

3. Ambient Temperature under DC Bias. No AC Conditions. Chip Deselected.

NOTES:

1. These parameters are determined by device characterization, but are not

production tested.

2. 3dV references the interpolated capacitance when the input and output switch

from 0V to 3V or from 3V to 0V.

Symbol

Parameter

Max.

Unit

Input Capacitance

8

pF

Output Capacitance

10.5

pF

5666 tbl 07

DC Electrical Characteristics Over the Operating

Symbol

Parameter

Test Conditions

70T3519/99/89S

Unit

Min.

Max.

___

10

µA

___

±30

µA

___

10

µA

___

0.4

V

2.4

___

V

___

0.4

V

2.0

___

V

5666 tbl 08

NOTES:

2. Applicable only for TMS, TDI and TRST inputs.

3. Outputs tested in tri-state mode.