M30LW128D110ZE6T datasheet(1/57 Pages) STMICROELECTRONICS

Part #	M30LW128D110ZE6T

Description	128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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PRELIMINARY DATA

February 2003

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

M30LW128D

128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories)

3V Supply, Multiple Memory Product

FEATURES SUMMARY

s

TWO M58LW064D 64Mbit FLASH MEMORIES

STACKED IN A SINGLE PACKAGE

s

WIDE x8 or x16 DATA BUS for HIGH

BANDWIDTH

s

SUPPLY VOLTAGE

–VDD = 2.7 to 3.6V for Program, Erase and

Read operations

–VDDQ = 1.8 to VDD for I/O buffers

s

ACCESS TIME

– Random Read 110ns

– Page Mode Read 110/25ns

s

PROGRAMMING TIME

– 16 Word Write Buffer

– 16µs Word effective programming time

s

128 UNIFORM 64 KWord/128KByte MEMORY

BLOCKS

s

BLOCK PROTECTION/ UNPROTECTION

s

PROGRAM and ERASE SUSPEND

s

128 bit PROTECTION REGISTER

s

COMMON FLASH INTERFACE

s

100, 000 PROGRAM/ERASE CYCLES per

BLOCK

s

ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code M30LW128D: 8817h

Figure 1. Packages

TSOP56 (N)

14 x 20 mm

TBGA64 (ZA)

10 x 13mm

TBGA

FBGA

LFBGA88 (ZE)

8 x 10mm

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