NSBA114EDXV6T1G datasheet(4/8 Pages) ONSEMI

Part #	NSBA114EDXV6T1G

Description	Dual PNP Bias Resistor Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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MUN5111DW1, NSBA114EDXV6, NSBA114EDP6

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4

TYPICAL CHARACTERISTICS

MUN5111DW1, NSBA114EDXV6

100

10

1

0.1

0.01

0.001

0

Vin, INPUT VOLTAGE (V)

TA = −25°C

25

°C

12

3

4

5

67

8

9

0.01

20

IC, COLLECTOR CURRENT (mA)

0.1

1

040

60

80

1000

110

100

IC, COLLECTOR CURRENT (mA)

TA =75°C

−25

°C

100

10

75

°C

50

010

20

30

40

10

3

1

2

VR, REVERSE VOLTAGE (V)

0

TA = −25°C

25

°C

75

°C

f = 10 kHz

lE = 0 A

TA = 25°C

VO = 5 V

IC/IB =10

VCE = 10 V

0

IC, COLLECTOR CURRENT (mA)

0.1

1

10

100

10

20

30

40

50

TA = −25°C

25

°C

75

°C

Figure 2. VCE(sat) vs. IC

Figure 3. DC Current Gain

Figure 4. Output Capacitance

Figure 5. Output Current vs. Input Voltage

Figure 6. Input Voltage vs. Output Current

25

°C

10

4

7

5

6

8

9

VO = 0.2 V

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NSBA114EDXV6T1G Datasheet(PDF) 4 Page - ON Semiconductor

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