EMC5DXV5T1G datasheet(8/11 Pages) ONSEMI

Part #	EMC5DXV5T1G

Description	Dual Common Base-Collector Bias Resistor Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G

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8

TYPICAL ELECTRICAL CHARACTERISTICS −EMC4DXV5T1 PNP TRANSISTOR

10

1

0.1

010

20

30

40

50

100

10

1

0

246

8

10

4.5

4

3.5

3

2.5

2

1.5

1

0.5

0

2

4

6

8

1015

2025

3035

4045

50

VR, REVERSE BIAS VOLTAGE (V)

Figure 22. VCE(sat) versus IC

IC, COLLECTOR CURRENT (mA)

0

2040

6080

Figure 23. DC Current Gain

1

10

100

IC, COLLECTOR CURRENT (mA)

Figure 24. Output Capacitance

Figure 25. Output Current versus Input Voltage

Vin, INPUT VOLTAGE (V)

Figure 26. Input Voltage versus Output Current

IC, COLLECTOR CURRENT (mA)

1

0.1

0.01

0.001

-25

°C

25

°C

TA =75°C

VCE = 10 V

180

160

140

120

100

80

60

40

20

0

2

4

6

8

15

20 40

50 60 70

80 90

f = 1 MHz

lE = 0 V

TA = 25°C

LOAD

+12 V

Figure 27. Inexpensive, Unregulated Current Source

Typical Application

for PNP BRTs

25

°C

IC/IB = 10

TA =-25°C

TA =75°C

25

°C

-25

°C

VO = 5 V

VO = 0.2 V

25

°C

TA =-25°C

75

°C

75

°C

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EMC5DXV5T1G Datasheet(PDF) 8 Page - ON Semiconductor

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