SMUN5313DW1T3G datasheet(6/10 Pages) ONSEMI

Part #	SMUN5313DW1T3G

Description	Complementary Bias Resistor Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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MUN5313DW1, NSBC144EPDXV6, NSBC144EPDP6

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6

TYPICAL CHARACTERISTICS − NPN TRANSISTOR

NSBC144EPDP6

Figure 12. VCE(sat) vs. IC

10

020

30

IC, COLLECTOR CURRENT (mA)

100

1

0.1

40

50

Figure 13. DC Current Gain

Figure 14. Output Capacitance

10

0.1

0.01

020

40

50

IC, COLLECTOR CURRENT (mA)

1000

100

1

0.1

10

100

IC, COLLECTOR CURRENT (mA)

Figure 15. Output Current vs. Input Voltage

100

10

1

0.1

0.001

04

8

Vin, INPUT VOLTAGE (V)

28

Figure 16. Input Voltage vs. Output Current

50

010

20

30

40

0.4

1.2

0

VR, REVERSE VOLTAGE (V)

30

IC/IB = 10

−55

°C

25

°C

VCE = 10 V

f = 10 kHz

IE = 0 A

TA = 25°C

0.8

1.6

2.0

2.4

VO = 5 V

VO = 0.2 V

10

150

°C

−55

°C

25

°C

150

°C

1

10

−55

°C

25

°C

150

°C

−55

°C

25

°C

150

°C

20

12

16

1

24

0.01

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SMUN5313DW1T3G Datasheet(PDF) 6 Page - ON Semiconductor

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