MEP4435Q8-0-T3-G datasheet(5/9 Pages) CYSTEKEC

Part #	MEP4435Q8-0-T3-G

Description	P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Manufacturer	CYSTEKEC [Cystech Electonics Corp.]

Direct Link	http://www.cystekec.com

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5 / 9 page

CYStech Electronics Corp.

Spec. No. : C391Q8-A

Issued Date : 2008.07.17

Revised Date : 2014.03.05

Page No. : 5/9

MEP4435Q8

CYStek Product Specification

Typical Characteristics(Cont.)

Capacitance vs Drain-to-Source Voltage

100

1000

10000

0.1

1

10

100

-VDS, Drain-Source Voltage(V)

C oss

Ciss

Crss

Threshold Voltage vs Junction Tempearture

0.8

1

1.2

1.4

1.6

1.8

2

-60

-20

20

60

100

140

Tj, Junction Temperature(°C)

ID=-250μA

ID=-1mA

Forward Transfer Admittance vs Drain Current

0.01

0.1

1

10

100

0.01

0.1

1

10

100

-ID, Drain Current(A)

VDS=-5V

Pulsed

TA=25°C

Gate Charge Characteristics

0

2

4

6

8

10

0

8

16

24

32

40

Qg, Total Gate Charge(nC)

ID=-10A

VDS=-5V

VDS=-10V

VDS=-15V

Maximum Safe Operating Area

0.01

0.1

1

10

100

0.1

1

10

100

-ID, Drain-Source Voltage(V)

DC

10ms

100ms

1ms

100μs

10μs

TA=25°C, Tj=150°C, VGS=-10V

θJA=50°C/W, Single Pulse

Maximum Drain Current vs Junction Temperature

0

2

4

6

8

10

12

14

16

25

50

75

100

125

150

175

Tj, Junction Temperature(°C)

TA=25°C, VGS=-10V

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MEP4435Q8-0-T3-G Datasheet(PDF) 5 Page - Cystech Electonics Corp.

MEP4435Q8-0-T3-G Datasheet(HTML) 5 Page - Cystech Electonics Corp.

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