RTL020P02

Transistors

Rev.B

2/4

Electrical characteristics (Ta=25°C)

Parameter

Symbol

Min.

−

Typ. Max.

Unit

Conditions

∗

∗

∗

∗

∗

∗

∗

∗

∗

Gate-source leakage

Drain-source breakdown voltage

Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-state

resistance

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Total gate charge

∗Pulsed

−±10

−20

−−

−

−

−1

−0.7

−−2.0

V

−

100

135

−

110

150

mΩ

mΩ

mΩ

−

180

250

1.2

−−

−

430

−

pF

−

80

55

−

pF

−

11

−

pF

f=1MHz

−

13

−

ns

−

38

−

ns

−

12

−

ns

−

4.9

−

ns

−

1.2

−

nC

−

1.3

−

nC

−−

nC

Body diode characteristics (Source-drain) (Ta=25°C)

−

−−1.2

V

Forward voltage

Parameter

Symbol Min.

Typ. Max. Unit

Conditions

RTL020P02FRA