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HY29F400BT70 Datasheet(PDF) 1 Page - Hynix Semiconductor |
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HY29F400BT70 Datasheet(HTML) 1 Page - Hynix Semiconductor |
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1 / 40 page  KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 45 ns n Low Power Consumption – 20 mA typical active read current in byte mode, 28 mA typical in word mode – 30 mA typical program/erase current – 5 µA maximum CMOS standby current n Compatible with JEDEC Standards – Package, pinout and command-set compatible with the single-supply Flash device standard – Provides superior inadvertent write protection n Sector Erase Architecture – Boot sector architecture with top and bottom boot block options available – One 16 Kbyte, two 8 Kbyte, one 32 Kbyte and seven 64 Kbyte sectors in byte mode – One 8 Kword, two 4 Kword, one 16 Kword and seven 32 Kword sectors in word mode – A command can erase any combination of sectors – Supports full chip erase n Erase Suspend/Resume – Temporarily suspends a sector erase operation to allow data to be read from, or programmed into, any sector not being erased n Sector Protection – Any combination of sectors may be locked to prevent program or erase operations within those sectors n Temporary Sector Unprotect – Allows changes in locked sectors (requires high voltage on RESET# pin) n Internal Erase Algorithm – Automatically erases a sector, any combination of sectors, or the entire chip n Internal Programming Algorithm – Automatically programs and verifies data at a specified address n Fast Program and Erase Times – Byte programming time: 7 µs typical – Sector erase time: 1.0 sec typical – Chip erase time: 11 sec typical n Data# Polling and Toggle Status Bits – Provide software confirmation of completion of program or erase operations n Ready/Busy# Output (RY/BY#) – Provides hardware confirmation of completion of program and erase operations n 100,000 Program/Erase Cycles Minimum n Space Efficient Packaging – Available in industry-standard 44-pin PSOP and 48-pin TSOP and reverse TSOP packages Revision 5.2, May 2001 GENERAL DESCRIPTION The HY29F400 is a 4 Megabit, 5 volt only CMOS Flash memory organized as 524,288 (512K) bytes or 262,144 (256K) words. The device is offered in industry-standard 44-pin PSOP and 48-pin TSOP packages. The HY29F400 can be programmed and erased in-system with a single 5-volt V CC supply. Inter- nally generated and regulated voltages are pro- vided for program and erase operations, so that the device does not require a high voltage power supply to perform those functions. The device can also be programmed in standard EPROM pro- grammers. Access times as fast as 55 ns over the full operating voltage range of 5.0 volts ± 10% are offered for timing compatibility with the zero wait state requirements of high speed micropro- A[17:0] 18 CE# OE# RESET# BYTE# WE# 8 7 DQ[7:0] DQ[14:8] DQ[15]/A-1 RY/BY# LOGIC DIAGRAM HY29F400 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
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