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7024S20FGI8 Datasheet(PDF) 9 Page - Integrated Device Technology |
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7024S20FGI8 Datasheet(HTML) 9 Page - Integrated Device Technology |
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9 / 22 page  6.42 IDT7024S/L High-Speed 4K x 16 Dual-Port Static RAM Military, Industrial and Commercial Temperature Ranges 9 NOTES: 1. Timing depends on which signal is asserted last, CE, OE, LB, or UB. 2. Timing depends on which signal is de-asserted first, CE, OE, LB, or UB. 3. tBDD delay is required only in cases where opposite port is completing a write operation to the same address location. For simultaneous read operations BUSY has no relation to valid output data. 4. Start of valid data depends on which timing becomes effective last tABE, tAOE, tACE, tAA or tBDD. 5. SEM = VIH. Timing of Power-Up Power-Down Waveform of Read Cycles(5) tRC R/ W CE ADDR tAA OE UB, LB 2740 drw 07 (4) tACE (4) tAOE (4) tABE (4) (1) tLZ tOH (2) tHZ (3,4) tBDD DATAOUT BUSYOUT VALID DATA (4) CE 2740 drw 08 tPU ICC ISB tPD , |
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