HY29F080R90 datasheet(6/38 Pages) HYNIX

Part #	HY29F080R90

Description	8 Megabit (1M x 8), 5 Volt-only, Flash Memory

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Manufacturer	HYNIX [Hynix Semiconductor]

Direct Link	http://www.skhynix.com/kor/main.do

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6 / 38 page

6

Rev. 6.1/May 01

HY29F080

Table 3. HY29F080 Bus Operations Requiring High Voltage 1, 2

Notes:

1. L = V

IL, H = VIH, X = Don’t Care.

See DC Characteristics for voltage levels.

2. Address bits not specified are Don’t Care.

3. See text for additional information.

4. SGA = sector group address. See Table 1.

Read Operation

Data is read from the HY29F080 by using stan-

dard microprocessor read cycles while placing the

address of the byte to be read on the device’s

address inputs, A[19:0]. As shown in Table 2, the

host system must drive the CE# and OE# inputs

Low and drive WE# High for a valid read opera-

tion to take place. The device outputs the speci-

fied array data on DQ[7:0].

The HY29F080 is automatically set for reading

array data after device power-up and after a hard-

ware reset to ensure that no spurious alteration of

the memory content occurs during the power tran-

sition. No command is necessary in this mode to

obtain array data, and the device remains enabled

for read accesses until the command register con-

tents are altered.

This device features an Erase Suspend mode.

While in this mode, the host may read the array

data from any sector of memory that is not marked

for erasure. If the host attempts to read from an

address within an erase-suspended sector, or

while the device is performing an erase or byte

program operation, the device outputs status data

instead of array data. After completing a program-

ming operation in the Erase Suspend mode, the

system may once again read array data with the

same exceptions noted above. After completing

an internal program or internal erase algorithm,

the HY29F080 automatically returns to the read

array data mode.

The host must issue a hardware reset or the soft-

ware reset command (see Command Definitions)

to return a sector to the read array data mode if

DQ[5] goes high during a program or erase cycle,

or to return the device to the read array data mode

while it is in the Electronic ID mode.

Write Operation

Certain operations, including programming data

and erasing sectors of memory, require the host

to write a command or command sequence to the

HY29F080. Writes to the device are performed

by placing the byte address on the device’s ad-

dress inputs while the data to be written is input

on DQ[7:0]. The host system must drive the CE#

and WE# pins Low and drive OE# High for a valid

write operation to take place. All addresses are

n

o

i

t

a

r

e

p

O

3

#

E

C

#

E

O

#

E

W

-

T

E

S

E

R

#

]

7

1

:

9

1

[

A

]

9

[

A

]

6

[

A

]

1

[

A

]

0

[

A

]

0

:

7

[

Q

D

p

u

o

r

G

r

o

t

c

e

S

t

c

e

t

o

r

P

LV

D

I

XH

A

G

S

4

V

D

I

XXX

X

p

u

o

r

G

r

o

t

c

e

S

t

c

e

t

o

r

p

n

U

V

D

I

V

D

I

XH

A

G

S

4

V

D

I

XXX

X

y

r

a

r

o

p

m

e

T

p

u

o

r

G

r

o

t

c

e

S

t

c

e

t

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p

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U

XXX

V

D

I

X

XXXX

X

r

e

r

u

t

c

a

f

u

n

a

M

e

d

o

C

LL

H

X

V

D

I

LLL

D

A

x

0

=

x

i

n

y

H

e

d

o

C

e

c

i

v

e

DL

L

H

X

V

D

I

LL

H

=

0

8

0

F

9

2

Y

H

5

D

x

0

p

u

o

r

G

r

o

t

c

e

S

n

o

i

t

c

e

t

o

r

P

n

o

i

t

a

c

i

f

i

r

e

V

LL

H

A

G

S

4

V

D

I

LH

L

=

0

x

0

d

e

t

c

e

t

o

r

p

n

U

=

1

0

x

0

d

e

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P

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