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7026S15GGB Datasheet(PDF) 8 Page - Integrated Device Technology |
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7026S15GGB Datasheet(HTML) 8 Page - Integrated Device Technology |
8 / 18 page 6.42 IDT7026S/L High-Speed 16K x 16 Dual-Port Static RAM Military, Industrial and Commercial Temperature Ranges 8 NOTES: 1. Timing depends on which signal is asserted last, OE, CE, LB, or UB. 2. Timing depends on which signal is de-asserted first CE, OE, LB, or UB. 3. tBDD delay is required only in cases where the opposite port is completing a write operation to the same address location. For simultaneous read operations BUSY has no relation to valid output data. 4. Start of valid data depends on which timing becomes effective last tAOE, tACE, tAA or tBDD. 5. SEM = VIH. WAVEFORM OF READ CYCLES(5) Timing of Power-Up Power-Down tRC R/ W CE ADDR tAA OE UB, LB 2939 drw 06 (4) tACE (4) tAOE (4) tABE (4) (1) tLZ tOH (2) tHZ (3, 4) tBDD DATAOUT BUSYOUT VALID DATA (4) CE 2939 drw 07 tPU ICC ISB tPD 50% 50% , |
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