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7026L25GG8 Datasheet(PDF) 9 Page - Integrated Device Technology |
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7026L25GG8 Datasheet(HTML) 9 Page - Integrated Device Technology |
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9 / 18 page  6.42 IDT7026S/L High-Speed 16K x 16 Dual-Port Static RAM Military, Industrial and Commercial Temperature Ranges 9 NOTES: 1. Transition is measured 0mV from Low or High-impedance voltage with Output Test Load (Figure 2). 2. This parameter is guaranteed by device characterization, but is not production tested. 3. To access RAM, CE = VIL and SEM = VIH. To access semaphore, CE = VIH and SEM = VIL. Either condition must be valid for the entire tEW time. 4. The specification for tDH must be met by the device supplying write data to the RAM under all operating conditions. Although tDH and tOW values will vary over voltage and temperature, the actual tDH will always be smaller than the actual tOW. 5. 'X' in part numbers indicates power rating (S or L). AC Electrical Characteristics Over the Operating Temperature and Supply Voltage(5,6) Symbol Parameter 7026X15 Com'l Only 7026X20 Com'l, Ind & Military 7026X25 Com'l, Ind & Military Unit Min. Max. Min. Max. Min. Max. WRITE CYCLE tWC Write Cycle Time 15 ____ 20 ____ 25 ____ ns tEW Chip Enable to End-of-Write(3) 12 ____ 15 ____ 20 ____ ns tAW Address Valid to End-of-Write 12 ____ 15 ____ 20 ____ ns tAS Address Set-up Time(3) 0 ____ 0 ____ 0 ____ ns tWP Write Pulse Width 12 ____ 15 ____ 20 ____ ns tWR Write Recovery Time 0 ____ 0 ____ 0 ____ ns tDW Data Valid to End-of-Write 10 ____ 15 ____ 15 ____ ns tHZ Output High-Z Time(1,2) ____ 10 ____ 12 ____ 15 ns tDH Data Hold Time(4) 0 ____ 0 ____ 0 ____ ns tWZ Write Enable to Output in High-Z(1,2) ____ 10 ____ 12 ____ 15 ns tOW Output Active from End-of-Write(1,2,4) 0 ____ 0 ____ 0 ____ ns tSWRD SEM Flag Write to Read Time 5 ____ 5 ____ 5 ____ ns tSPS SEM Flag Contention Window 5 ____ 5 ____ 5 ____ ns 3199 tbl 13a Symbol Parameter 7026X35 Com'l, Ind & Military 7026X55 Com'l, Ind & Military Unit Min. Max. Min. Max. WRITE CYCLE tWC Write Cycle Time 35 ____ 55 ____ ns tEW Chip Enable to End-of-Write(3) 30 ____ 45 ____ ns tAW Address Valid to End-of-Write 30 ____ 45 ____ ns tAS Address Set-up Time(3) 0 ____ 0 ____ ns tWP Write Pulse Width 25 ____ 40 ____ ns tWR Write Recovery Time 0 ____ 0 ____ ns tDW Data Valid to End-of-Write 15 ____ 30 ____ ns tHZ Output High-Z Time(1,2) ____ 15 ____ 25 ns tDH Data Hold Time(4) 0 ____ 0 ____ ns tWZ Write Enable to Output in High-Z(1,2) ____ 15 ____ 25 ns tOW Output Active from End-of-Write(1,2,4) 0 ____ 0 ____ ns tSWRD SEM Flag Write to Read Time 5 ____ 5 ____ ns tSPS SEM Flag Contention Window 5 ____ 5 ____ ns 2939 tbl 13b |
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