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2SD1976 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # 2SD1976
Description  isc Silicon NPN Darlington Power Transistor
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD1976 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Darlington Power Transistor
2SD1976
DESCRIPTION
·
Fast Switching Speed
·
High DC Current Gain
·
Built-in high voltage zener diode
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
High voltage switching
·
Igniter
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
300
V
VCEO
Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
6
A
ICM
Collector Current-Peak
10
A
PC
Collector Power Dissipation
@ TC=25℃
40
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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