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2SD1966 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1966 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor 2SD1966 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 100μA ; IE= 0 80 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; RBE= ∞ 80 V V(BR)EBO Emitter-Base Breakdown Vltage IE= 100μA ; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA 0.4 V VBE(sat) Base-Emitter Saturation Voltage IC= 500mA; IB= 50mA 1.2 V ICBO Collector Cutoff Current VCB= 80V; IE= 0 10 μ A IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μ A hFE-1 DC Current Gain IC= 50mA ; VCE= 3V 100 320 hFE-2 DC Current Gain IC= 100mA ; VCE= 3V 50 fT Current-Gain—Bandwidth Product IC= 100mA ; VCE= 5V 100 MHz COB Output Capacitance IE= 0; VCB= 10V,ftest= 1MHz 20 pF |
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