CJL2623 datasheet(2/5 Pages) JIANGSU

Part #	CJL2623

Description	Dual P-Channel MOSFET

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Manufacturer	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

Direct Link	http://www.cj-elec.com/en/

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2

C,May,2015

MOSFET ELECTRICAL CHARACTERISTICS

a

T =25

℃ unless otherwise specified

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

STATIC PARAMETERS

Drain-source breakdown voltage

V(BR)DSS

VGS = 0V, ID =-250µA

-30

V

Zero gate voltage drain current

IDSS

VDS =-30V,VGS = 0V

-1

µA

Gate-body leakage current

IGSS

VGS =±20V, VDS = 0V

±100

nA

Gate threshold voltage

VGS(th)

VDS =VGS, ID =-250µA

-1

-3

V

Drain-source on-resistance (note 3)

RDS(on)

VGS =-10V, ID =-3A

130

mΩ

VGS =-4.5V, ID =-2A

180

mΩ

Forward tranconductance

gFS

VDS =-5V, ID =-2A

2

S

Diode forward voltage (note 3)

VSD

IS=-1A, VGS = 0V

-1.2

V

DYNAMIC PARAMETERS

(note 4)

Input Capacitance

Ciss

VDS =-25V,VGS =0V,f =1MHz

240

pF

Output Capacitance

Coss

42

pF

Reverse Transfer Capacitance

Crss

32

pF

SWITCHING PARAMETERS

(note 3,4)

Turn-on delay time

td(on)

VDD=-15V,VGS=-10V,ID=-1A

RD=15Ω,RG=3.3Ω

5

ns

Turn-on rise time

tr

6

ns

Turn-off delay time

td(off)

15

ns

Turn-off fall time

tf

3

ns

Total Gate Charge

Qg

VDS =-24V,VGS =-4.5V,ID=-2A

4.5

nC

Gate-Source Charge

Qgs

0.5

nC

Gate-Drain Charge

Qgd

1.4

nC

Notes :

3. Pulse Test : Pulse width≤300μs, duty cycle≤2%.

4. Graranted by design，not subject to production testing.

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CJL2623 Datasheet(PDF) 2 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

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