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CJ5853DCB Datasheet(PDF) 2 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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CJ5853DCB Datasheet(HTML) 2 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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2 / 6 page  Parameter Symbol Test conditions Min Typ Max Unit P-MOSFET STATIC PARAMETERS Drain-source breakdown voltage V (BR)DSS VGS =0V, ID=-250µA -20 V Zero gate voltage drain current IDSS VDS =-16V,VGS = 0V -1 µA Gate-body leakage current IGSS VGS =±8V, VDS = 0V ±100 nA Gate threshold voltage VGS(th) VDS =VGS, ID =-250µA -0.45 V Drain-source on-resistance(note1) RDS(on) VGS =-4.5V, ID =-2.7A 110 mΩ VGS =-2.5V, ID =-2.2A 160 mΩ VGS =-1.8V, ID =-1A 240 mΩ Forward transconductance(note1) gFS VDS=-10V,ID=-2.7A 7 S Diode forward voltage(note1) VSD IS=-0.9A, VGS = 0V -1.2 V DYNAMIC PARAMETERS (note 2) Input capacitance Ciss VDS =-10V,VGS =0V,f =1MHz 300 pF Output capacitance Coss 150 pF Reverse transfer capacitance Crss 50 pF SWITCHING PARAMETERS (note 2) Turn-on delay time td(on) VGS=-4.5V,VDD=-10V, RL=10Ω,RG=6Ω, ID=-1A 25 ns Turn-on rise time tr 45 ns Turn-off delay time td(off) 45 ns Turn-off fall time tf 40 ns Total Gate Charge Qg VDS =-10V,VGS =-4.5V, ID =-2.7A 6.5 nC Gate-Source Charge Qgs 1.4 nC Gate-Drain Charge Qgd 0.65 nC SCHOTTKY BARRIER DIODE Forward voltage VF IF=0.5A 0.48 V Reverse current IR VR=20V 100 µA Junction capacitance Cj VR=10V,f=1MHz 41 pF Note: 1.Pulse test: pulse width =300μs, duty cycle≤ 2% 2.These parameters have no way to verify. www.cj-elec.com 2 A,May,2015 MOSFET ELECTRICAL CHARACTERISTICS a T =25 ℃ unless otherwise specified |
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