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2SD1532 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD1532 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Darlington Power Transistor 2SD1532 DESCRIPTION · Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) · High DC Current Gain : hFE= 1000(Min) @ IC= 2A, VCE= 4V · Fast Switching Speed · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 8 A IB Base Current 120 mA PC Collector Power Dissipation TC=25℃ 30 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ |
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Similar Description - 2SD1532 |
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