70T651S15BFGI8 datasheet(9/28 Pages) IDT

Part #	70T651S15BFGI8

Description	HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM

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Manufacturer	IDT [Integrated Device Technology]

Direct Link	http://www.idt.com

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9

IDT70T651/9S

High-Speed 2.5V 256/128K x 36 Asynchronous Dual-Port Static RAM

Industrial and Commercial Temperature Ranges

DC Electrical Characteristics Over the Operating

Temperature and Supply Voltage Range (VDD = 2.5V ± 100mV)

NOTES:

1. VDDQ is selectable (3.3V/2.5V) via OPT pins. Refer to page 6 for details.

2. Applicable only for TMS, TDI and TRST inputs.

3. Outputs tested in tri-state mode.

DC Electrical Characteristics Over the Operating

Temperature and Supply Voltage Range(3) (VDD = 2.5V ± 100mV)

NOTES:

1. Atf=fMAX,addressandcontrollines(exceptOutputEnable)arecyclingatthemaximumfrequencyreadcycleof1/tRC,using"ACTESTCONDITIONS"atinputlevels

ofGNDto3.3V.

2. f=0meansnoaddressorcontrollineschange.AppliesonlytoinputatCMOSlevelstandby.

3. Port"A"maybeeitherleftorright port.Port"B"istheoppositefromport"A".

4. VDD =3.3V,TA =25°C forTyp,andarenotproductiontested.IDDDC(f=0)=100mA(Typ).

5. CEX = VIL means CE0X = VIL and CE1X = VIH

CEX

= VIH means CE0X = VIH or CE1X = VIL

CEX

< 0.2V means CE0X< 0.2V and CE1X > VDDQX - 0.2V

CEX

> VDDQX - 0.2V means CE0X> VDDQX - 0.2V or CE1X < 0.2V.

"X"represents"L"forleftportor"R"forrightport.

6. ISB1,ISB2andISB4willallreachfullstandbylevels(ISB3)ontheappropriateport(s)ifZZLand/orZZR=VIH.

7. 10nsIndustrialspeedgradeisavailableinBF-208andBC-256packagesonly.

70T651/9S10

Com'l

& Ind(7)

70T651/9S12

Com'l

& Ind

70T651/9S15

Com'l Only

Symbol

Parameter

Test Condition

Version

Typ.(4)

Max.

Typ.(4)

Max.

Typ.(4)

Max.

Unit

IDD

Dynamic Operating

Current (Both

Ports Active)

CEL

and CER= VIL,

Outputs Disabled

f = fMAX(1)

COM'L

S

300

405

300

355

225

305

mA

IND

S

300

445

300

395

____

ISB1(6)

Standby Current

(Both Ports - TTL

Level Inputs)

CEL

= CER = VIH

f = fMAX(1)

COM'L

S

90

120

75

105

60

85

mA

IND

S

90

145

75

130

____

ISB2(6)

Standby Current

(One Port - TTL

Level Inputs)

CE"A"

= VIL and CE"B" = VIH(5)

Active Port Outputs Disabled,

f = fMAX(1)

COM'L

S

200

265

180

230

150

200

mA

IND

S

200

290

180

255

____

ISB3

Full Standby Current

(Both Ports - CMOS

Level Inputs)

Both Ports CEL and

CER

> VDDQ - 0.2V,

VIN > VDDQ - 0.2V or VIN < 0.2V,

f = 0(2)

COM'L

S

210

2

10

210

mA

IND

S

220220

____

ISB4(6)

Full Standby Current

(One Port - CMOS

Level Inputs)

CE"A"

< 0.2V and

CE"B"

> VDDQ - 0.2V(5)

VIN > VDDQ - 0.2V or VIN < 0.2V,

Active Port, Outputs Disabled,

f = fMAX(1)

COM'L

S

200

265

180

230

150

200

mA

IND

S

200

290

180

255

____

IZZ

Sleep Mode Current

(Both Ports - TTL

Level Inputs)

ZZL = ZZR = VIH

f = fMAX(1)

COM'L

S

210

2

10

210

mA

IND

S

220220

____

5632 tbl 10

Symbol

Parameter

Test Conditions

70T651/9S

Unit

Min.

Max.

|ILI|

Input Leakage Current(1)

VDDQ = Max., VIN = 0V to VDDQ

___

10

µA

|ILI|

JTAG & ZZ Input Leakage Current(1,2)

VDD = Max., VIN = 0V to VDD

___

+30

µA

|ILO|

Output Leakage Current(1,3)

CE0

= VIH or CE1 = VIL, VOUT = 0V to VDDQ

___

10

µA

VOL (3.3V)

Output Low Voltage(1)

IOL = +4mA, VDDQ = Min.

___

0.4

V

VOH (3.3V)

Output High Voltage(1)

IOH = -4mA, VDDQ = Min.

2.4

___

V

VOL (2.5V)

Output Low Voltage(1)

IOL = +2mA, VDDQ = Min.

___

0.4

V

VOH (2.5V)

Output High Voltage(1)

IOH = -2mA, VDDQ = Min.

2.0

___

V

5632 tbl 09

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