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70V639S15PRFG8 Datasheet(PDF) 7 Page - Integrated Device Technology

Part # 70V639S15PRFG8
Description  HIGH-SPEED 3.3V 128K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM
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Manufacturer  IDT [Integrated Device Technology]
Direct Link  http://www.idt.com
Logo IDT - Integrated Device Technology

70V639S15PRFG8 Datasheet(HTML) 7 Page - Integrated Device Technology

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IDT70V639S
High-Speed 3.3V 128K x 18 Asynchronous Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
7
RecommendedOperating
Temperature and Supply Voltage(1)
Recommended DC Operating
Conditions with VDDQ at 2.5V
Absolute Maximum Ratings(1)
NOTES:
1. VIL > -1.5V for pulse width less than 10 ns.
2. VTERM must not exceed VDDQ + 100mV.
3. To select operation at 2.5V levels on the I/Os and controls of a given port, the
OPT pin for that port must be set to VIL (0V), and VDDQX for that port must be supplied
as indicated above.
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. VTERM must not exceed VDD + 150mV for more than 25% of the cycle time or
4ns maximum, and is limited to < 20mA for the period of VTERM > VDD + 150mV.
3. Ambient Temperature Under Bias. No AC Conditions. Chip Deselected.
NOTE:
1. This is the parameter TA. This is the "instant on" case temperature.
Recommended DC Operating
Conditions with VDDQ at 3.3V
NOTES:
1. VIL > -1.5V for pulse width less than 10 ns.
2. VTERM must not exceed VDDQ + 150mV.
3. To select operation at 3.3V levels on the I/Os and controls of a given port, the
OPT pin for that port must be set to VIH (3.3V), and VDDQX for that port must be
supplied as indicated above.
Grade
Ambient
Temperature
GND
VDD
Commercial
0OC to +70OC0V
3.3V
+ 150mV
Industrial
-40OC to +85OC0V
3.3V
+ 150mV
5621 tbl 04
Symbol
Rating
Commercial
& Industrial
Unit
VTERM(2)
Terminal Voltage
with Respect to GND
-0.5 to +4.6
V
TBIAS(3)
Temperature Under Bias
-55 to +125
o
C
TSTG
Storage Temperature
-65 to +150
o
C
TJN
Junction Temperature
+150
o
C
IOUT
DC Output Current
50
mA
5621 tbl 05
Symbol
Parameter
Min. Typ.
Max.
Unit
VDD
Core Supply Voltage
3.15
3.3
3.45
V
VDDQ
I/O Supply Voltage(3)
2.4
2.5
2.6
V
VSS
Ground
0
0
0
V
VIH
Input High Voltage(3)
(Address & Control Inputs)
1.7
____
VDDQ + 100mV(2)
V
VIH
Input High Voltage - I/O(3)
1.7
____
VDDQ + 100mV(2)
V
VIL
Input Low Voltage
-0.5(1)
____
0.7
V
5621 tbl 06
Symbol
Parameter
Min.
Typ.
Max.
Unit
VDD
Core Supply Voltage
3.15
3.3
3.45
V
VDDQ
I/O Supply Voltage(3)
3.15
3.3
3.45
V
VSS
Ground
0
0
0
V
VIH
Input High Voltage
(Address & Control Inputs)(3)
2.0
____
VDDQ + 150mV(2)
V
VIH
Input High Voltage - I/O(3)
2.0
____
VDDQ + 150mV(2)
V
VIL
Input Low Voltage
-0.3(1)
____
0.8
V
5621 tbl 07
NOTES:
1. These parameters are determined by device characterization, but are not
production tested.
2. COUT also references CI/O.
Capacitance(1)
(TA = +25°C, F = 1.0MHZ) TQFP ONLY
Symbol
Parameter
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 0V
8
pF
COUT(2)
Output Capacitance
VOUT = 0V
10.5
pF
5621 tbl 08


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