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IDT70T633 Datasheet(PDF) 7 Page - Integrated Device Technology |
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IDT70T633 Datasheet(HTML) 7 Page - Integrated Device Technology |
7 / 27 page 7 IDT70T633/1S High-Speed 2.5V 512/256K x 18 Asynchronous Dual-Port Static RAM Industrial and Commercial Temperature Ranges RecommendedOperating Temperature and Supply Voltage(1) Recommended DC Operating Conditions with VDDQ at 2.5V Absolute Maximum Ratings(1) NOTES: 1. VIL (min.) = -1.0V for pulse width less than tRC/2 or 5ns, whichever is less. 2. VIH (max.) = VDDQ + 1.0V for pulse width less than tRC/2 or 5ns, whichever is less. 3. To select operation at 2.5V levels on the I/Os and controls of a given port, the OPT pin for that port must be set to VSS (0V), and VDDQX for that port must be supplied as indicated above. NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. This is a steady-state DC parameter that applies after the power supply has reached its nominal operating value. Power sequencing is not necessary; however, the voltage on any Input or I/O pin cannot exceed VDDQ during power supply ramp up. 3. Ambient Temperature under DC Bias. No AC Conditions. Chip Deselected. NOTE: 1. This is the parameter TA. This is the "instant on" case temperature. Grade Ambient Temperature GND VDD Commercial 0OC to +70OC0V 2.5V + 100mV Industrial -40OC to +85OC0V 2.5V + 100mV 5670 tbl 04 Symbol Rating Commercial & Industrial Unit VTERM (VDD) VDD Terminal Voltage with Respect to GND -0.5 to 3.6 V VTERM(2) (VDDQ) VDDQ Terminal Voltage with Respect to GND -0.3 to VDDQ + 0.3 V VTERM(2) (INPUTS and I/O's) Input and I/O Terminal Voltage with Respect to GND -0.3 to VDDQ + 0.3 V TBIAS(3) Temperature Under Bias -55 to +125 o C TSTG Storage Temperature -65 to +150 o C TJN Junction Temperature +150 o C IOUT(For VDDQ = 3.3V) DC Output Current 50 mA IOUT(For VDDQ = 2.5V) DC Output Current 40 mA 5670 tbl 07 Symbol Parameter Min. Typ. Max. Unit VDD Core Supply Voltage 2.4 2.5 2.6 V VDDQ I/O Supply Voltage(3) 2.4 2.5 2.6 V VSS Ground 0 0 0 V VIH Input High Voltage (Address, Control & Data I/O Inputs)(3) 1.7 ____ VDDQ + 100mV(2) V VIH Input High Voltage _ JTAG 1.7 ____ VDD + 100mV(2) V VIH Input High Voltage - ZZ, OPT, M/S VDD - 0.2V ____ VDD + 100mV(2) V VIL Input Low Voltage -0.3(1) ____ 0.7 V VIL Input Low Voltage - ZZ, OPT, M/S -0.3(1) ____ 0.2 V 5670 tbl 05 NOTES: 1. These parameters are determined by device characterization, but are not production tested. 2. 3dV references the interpolated capacitance when the input and output switch from 0V to 3V or from 3V to 0V. 3. COUT also references CI/O. Capacitance(1) (TA = +25°C, F = 1.0MHZ) TQFP ONLY Symbol Parameter Conditions(2) Max. Unit CIN Input Capacitance VIN = 3dV 8 pF COUT(3) Output Capacitance VOUT = 3dV 10.5 pF 5670 tbl 08 Recommended DC Operating Conditions with VDDQ at 3.3V NOTES: 1. VIL (min.) = -1.0V for pulse width less than tRC/2 or 5ns, whichever is less. 2. VIH (max.) = VDDQ + 1.0V for pulse width less than tRC/2 or 5ns, whichever is less. 3. To select operation at 3.3V levels on the I/Os and controls of a given port, the OPT pin for that port must be set to VDD (2.5V), and VDDQX for that port must be supplied as indicated above. Symbol Parameter Min. Typ. Max. Unit VDD Core Supply Voltage 2.4 2.5 2.6 V VDDQ I/O Supply Voltage(3) 3.15 3.3 3.45 V VSS Ground 0 0 0 V VIH Input High Voltage (Address, Control &Data I/O Inputs)(3) 2.0 ____ VDDQ + 150mV(2) V VIH Input High Voltage _ JTAG 1.7 ____ VDD + 100mV(2) V VIH Input High Voltage - ZZ, OPT, M/S VDD - 0.2V ____ VDD + 100mV(2) V VIL Input Low Voltage -0.3(1) ____ 0.8 V VIL Input Low Voltage - ZZ, OPT, M/S -0.3(1) ____ 0.2 V 5670 tbl 06 |
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