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CMT0760FP Datasheet(PDF) 2 Page - List of Unclassifed Manufacturers |
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CMT0760FP Datasheet(HTML) 2 Page - List of Unclassifed Manufacturers |
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2 / 7 page  CMT07N60 POWER FIELD EFFECT TRANSISTOR 2003/06/19 Preliminary Rev. 1.0 Champion Microelectronic Corporation Page 2 ORDERING INFORMATION Part Number Package CMT07N60 TO-220 CMT07N60FP TO-220 Full Pak ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25℃. CMT07N60 Characteristic Symbol Min Typ Max Units Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 μA) V(BR)DSS 600 V Drain-Source Leakage Current (VDS = 600 V, VGS = 0 V) (VDS = 480 V, VGS = 0 V, TJ = 125℃) IDSS 100 100 μ A Gate-Source Leakage Current-Forward (Vgsf = 20 V, VDS = 0 V) IGSSF 100 nA Gate-Source Leakage Current-Reverse (Vgsr = 20 V, VDS = 0 V) IGSSR 100 nA Gate Threshold Voltage (VDS = VGS, ID = 250 μA) VGS(th) 2.0 4.0 V Static Drain-Source On-Resistance (VGS = 10 V, ID = 3.5A) * RDS(on) 1.2 Ω Forward Transconductance (VDS = 40 V, ID = 3.5A) * gFS 4.0 mhos Input Capacitance Ciss 1380 1800 pF Output Capacitance Coss 115 150 pF Reverse Transfer Capacitance (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) Crss 23 30 pF Turn-On Delay Time td(on) 30 70 ns Rise Time tr 80 170 ns Turn-Off Delay Time td(off) 125 260 ns Fall Time (VDD = 300 V, ID = 7.0 A, VGS = 10 V, RG = 9.1Ω) * tf 85 180 ns Total Gate Charge Qg 38 50 nC Gate-Source Charge Qgs 6.4 nC Gate-Drain Charge (VDS = 480 V, ID = 7.0 A, VGS = 10 V)* Qgd 15 nC Internal Drain Inductance (Measured from the drain lead 0.25” from package to center of die) LD 4.5 nH Internal Drain Inductance (Measured from the source lead 0.25” from package to source bond pad) LS 7.5 nH SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage(1) VSD 1.4 V Forward Turn-On Time ton ** ns Reverse Recovery Time (IS =7.0 A, dIS/dt = 100A/µs) trr 415 ns * Pulse Test: Pulse Width ≦300µs, Duty Cycle ≦2% ** Negligible, Dominated by circuit inductance |
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