RHK005N03

Transistors

2/2

Electrical characteristics (Ta=25°C)

Parameter

Symbol

Min.

−

Typ. Max. Unit

Conditions

∗

∗

∗

∗

∗

∗

Gate-source leakage

Drain-source breakdown voltage

Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-state

resistance

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

∗Pulsed

−±10

30

−−

−

−

1

1.0

−

2.5

V

−

350

550

−

510

720

mΩ

mΩ

−

600

840

0.5

−−

−

45

−

pF

−

20

10

−

pF

−

10

−

pF

f=1MHz

−

10

−

ns

−

15

−

ns

−

30

−

ns

−−

ns

Body diode characteristics (Source-drain) (Ta=25°C)

−−

1.2

V

Forward voltage

Parameter

Symbol Min.

Typ. Max.

Unit

Conditions

RHK005N03FRA