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LR645 Datasheet(PDF) 3 Page - Microchip Technology |
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LR645 Datasheet(HTML) 3 Page - Microchip Technology |
3 / 16 page 2015 Microchip Technology Inc. DS20005384A-page 3 LR645 1.0 ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS Input Voltage .................................................................................................................................................................................. 450V Output voltage............................................................................................................................................................................... 15.5V Operating and storage temperature............................................................................................................................. -55°C to +150°C Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions, above those indicated in the operational listings of this specification, is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. 1.1 ELECTRICAL SPECIFICATIONS TABLE 1-1: ELECTRICAL CHARACTERISTICS 1 1 Test Conditions unless otherwise specified: TA = 25°C, VIN = 15V-450V, COUT = 0.01 µF Symbol Parameter Min Typ Max Units Conditions VOUT Output voltage 9.3 10 10.7 V No load Output voltage over temperature2 2 Guaranteed by design 9.0 10 11.5 V TJ = - 40 to +125°C, No load ∆VOUT Line regulation - 40 200 mV VIN = 15 to 400V, No load Load regulation - 150 400 mV VIN = 50V, IOUT = 0 to 3.0mA VIN Operating input voltage range 15 - 450 V IINQ Input quiescent current - 50 150 µA No Load IOFF VIN off-state leakage current - 0.1 10 µA VAUX ≥ VOUT +1V applied to VOUT pin IAUX Input current to VOUT -- 200 µA VAUX ≥ VOUT +1V applied to VOUT pin ∆VOUT/∆VIN Ripple rejection ratio2 50 60 - dB 120 Hz, No Load en Noise voltage2 - 25 - µV 0.01 to 100 KHz IPEAK Output peak current3 3 Pulse test duration <1.0 msec, duty cycle <2% -30- mA COUT = 10 µF, VIN = 400V VAUX External voltage applied to VOUT -- 13.2 V 8-lead, adjustable voltage version only VOUT Output regulation trim range2 8 - 12 V No load ∆VOUT Load regulation at 8V trim2 - 200 400 mV VIN = 15V, IOUT = 0 to 1.0 mA Load regulation at 12V trim2 - 100 400 mV VIN = 50V, IOUT = 0 to 3.0 mA TABLE 1-2: THERMAL CHARACTERISTICS1 Package θja Power Dissipation @TA=25°C 8-lead SOIC 101°C/W 0.31 TO-92 132°C/W 0.74 TO-220 29°C/W 1.8 TO-243AA (SOT-89) 133°C/W 1.6 1 Mounted on FR5 board; 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate. |
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