NL27WZ00 datasheet(3/6 Pages) ONSEMI

Part #	NL27WZ00

Description	Dual 2-Input NAND Gate

Download	6 Pages

Scroll/Zoom	100%

Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

Logo

3 / 6 page

NL27WZ00

http://onsemi.com

3

DC ELECTRICAL CHARACTERISTICS

Parameter

Condition

Symbol

VCC

(V)

TA = 255C

−555C 3 TA 3 1255C

Units

Min

Typ

Max

Min

Max

High−Level Input

Voltage

VIH

1.65

2.3 to 5.5

0.75 VCC

0.7 VCC

0.75 VCC

0.7 VCC

V

Low−Level Input

Voltage

VIL

1.65

2.3 to 5.5

0.25 VCC

0.3 VCC

0.25

0.3 VCC

V

High−Level Output

Voltage

VIN = VIL or VIH

IOH = −100 mA

IOH = −4 mA

IOH = −8 mA

IOH = −12 mA

IOH = −16 mA

IOH = −24 mA

IOH = −32 mA

VOH

1.65 to 5.5

1.65

2.3

2.7

3.0

4.5

VCC − 0.1

1.29

1.9

2.2

2.4

2.3

3.8

VCC

1.5

2.1

2.4

2.7

2.5

4.0

VCC − 0.1

1.29

1.9

2.2

2.4

2.3

3.8

V

Low−Level Output

Voltage

VIN = VIH or VOH

IOL = 100 mA

IOL = 4 mA

IOL = 8 mA

IOL = 12 mA

IOL = 16 mA

IOL = 24 mA

IOL = 32 mA

VOL

1.65 to 5.5

1.65

2.3

2.7

3.0

4.5

0.0

0.08

0.20

0.22

0.28

0.38

0.42

0.1

0.24

0.3

0.4

0.55

0.1

0.24

0.3

0.4

0.55

V

Input Leakage

Current

VIN = 5.5 V or GND

IIN

0 to 5.5

±0.1

±1.0

mA

Quiescent Supply

Current

VIN = 5.5 V or GND

ICC

5.5

1.0

10

mA

Power Off Leakage

Current

VIN = 5.5 V or

VOUT = 5.5 V

IOFF

0

1.0

10

mA

AC ELECTRICAL CHARACTERISTICS tR = tF = 3.0 ns

Parameter

Condition

Symbol

VCC

(V)

TA = 255C

−555C 3 TA 3 1255C

Units

Min

Typ

Max

Min

Max

Propagation Delay

(Figure 3 and 4)

RL = 1 MW, CL = 15 pF

tPLH

tPHL

1.8 ± 0.15

2.0

5.7

10.5

2.0

11.0

ns

2.5 ± 0.2

1.2

3.2

5.3

1.2

5.7

RL = 1 MW, CL = 15 pF

RL = 500 W, CL = 50 pF

3.3 ± 0.3

0.8

1.2

2.4

3.0

3.7

4.6

0.8

1.2

4.0

4.9

RL = 1 MW, CL = 15 pF

RL = 500 W, CL = 50 pF

5.0 ± 0.5

0.5

0.8

1.9

2.4

2.9

3.6

0.5

0.8

3.2

3.9

CAPACITIVE CHARACTERISTICS

Parameter

Condition

Symbol

Typical

Units

Input Capacitance

VCC = 5.5 V, VI = 0 V or VCC

CIN

2.5

pF

Power Dissipation Capacitance

(Note 7)

10 MHz, VCC = 3.3 V, VI = 0 V or VCC

10 MHz, VCC = 5.5 V, VI = 0 V or VCC

CPD

9

11

pF

7. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.

Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the no−load dynamic

power consumption; PD = CPD VCC2 fin + ICC VCC.

Similar Part No. - NL27WZ00

Manufacturer	Part #	Datasheet	Description
ON Semiconductor	NL27WZ00	83Kb / 8P	Dual 2-Input NAND Gate September, 2001 ??Rev. 1
	NL27WZ00	88Kb / 6P	Dual 2?묲nput NAND Gate May, 2006 ??Rev. 6
	NL27WZ00	185Kb / 11P	Dual 2-Input NAND Gate January, 2019 ??Rev. 13
	NL27WZ00	184Kb / 12P	Dual 2-Input NAND Gate March, 2022 - Rev. 15
	NL27WZ00MQ1TCG	185Kb / 11P	Dual 2-Input NAND Gate January, 2019 ??Rev. 13

More results

Similar Description - NL27WZ00

Manufacturer	Part #	Datasheet	Description
Toshiba Semiconductor	TC7WH00FU	195Kb / 6P	DUAL 2-INPUT NAND GATE
Panasonic Semiconductor	74LVC2G00	91Kb / 16P	Dual 2-input NAND gate
Unisonic Technologies	U74LVC2G132	181Kb / 5P	DUAL 2-INPUT NAND GATE
ON Semiconductor	NL27WZ00	83Kb / 8P	Dual 2-Input NAND Gate September, 2001 ??Rev. 1
Nexperia B.V. All right...	74HCT2G00	208Kb / 11P	Dual 2-input NAND gate Rev. 6 - 20 November 2018
Toshiba Semiconductor	TC7W00FK	221Kb / 8P	Dual 2-Input NAND Gate
NXP Semiconductors	74LVC2G00DC-G	279Kb / 20P	Dual 2-input NAND gate Rev. 12-8 April 2013
NXP Semiconductors	74HC2G00	91Kb / 13P	Dual 2-input NAND gate Rev. 04-3 July 2008
Nexperia B.V. All right...	74AHC2G00-Q100	211Kb / 11P	Dual 2-input NAND gate
ON Semiconductor	NL27WZ00	184Kb / 12P	Dual 2-Input NAND Gate March, 2022 - Rev. 15

More results

NL27WZ00 Datasheet(PDF) 3 Page - ON Semiconductor

NL27WZ00 Datasheet(HTML) 3 Page - ON Semiconductor

Similar Part No. - NL27WZ00

Similar Description - NL27WZ00

Html Pages

1 2 3 4 5 6

Datasheet Download

Link URL