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DAC8551-Q1 Datasheet(PDF) 5 Page - Texas Instruments |
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DAC8551-Q1 Datasheet(HTML) 5 Page - Texas Instruments |
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5 / 29 page  5 DAC8551-Q1, DAC6551-Q1 www.ti.com SLASEB8C – FEBRUARY 2016 – REVISED NOVEMBER 2016 Product Folder Links: DAC8551-Q1 DAC6551-Q1 Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated (1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification. 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) ±2000 V Charged-device model (CDM), per AEC Q100-011 All pins ±500 Corner pins (1, 4, 5, and 8) ±750 6.3 Recommended Operating Conditions over operating ambient temperature range (unless otherwise noted) MIN NOM MAX UNIT POWER SUPPLY Supply voltage VDD to GND 3 5.5 V DIGITAL INPUTS Digital input voltage DIN, SCLK and SYNC 0 VDD V REFERENCE INPUT VREF Reference input voltage 0 VDD V AMPLIFIER FEEDBACK INPUT VFB Output amplifier feedback input VOUT V TEMPERATURE RANGE TA Operating ambient temperature –40 125 °C (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 6.4 Thermal Information THERMAL METRIC(1) DAC8551-Q1 DAC6551-Q1 UNIT DGK (VSSOP) 8 PINS RθJA Junction-to-ambient thermal resistance 173.7 °C/W RθJC(top) Junction-to-case (top) thermal resistance 65.4 °C/W RθJB Junction-to-board thermal resistance 94.2 °C/W ψJT Junction-to-top characterization parameter 10.2 °C/W ψJB Junction-to-board characterization parameter 92.7 °C/W (1) Linearity calculated using a reduced code range of 485 to 64,741 (16-bit); 30 to 4,046 (12-bit); output unloaded. 6.5 Electrical Characteristics VDD = 3 V to 5.5 V, VREF = VDD and TA = –40°C to 125°C, unless otherwise noted. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC PERFORMANCE(1) Resolution DAC8551-Q1 16 Bits DAC6551-Q1 12 Relative accuracy DAC8551-Q1 ±4 ±16 LSB DAC6551-Q1 ±0.3 ±1 Differential nonlinearity DAC8551-Q1 ±0.35 ±2 LSB DAC6551-Q1 ±0.02 ±1 Offset error ±1 ±15 mV Full-scale error ±0.05 ±0.5 % of FSR Gain error ±0.02 ±0.2 % of FSR Offset error drift ±5 μV/°C Gain temperature coefficient ±1 ppm of FSR/°C |
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