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61LV25616AL Datasheet(PDF) 5 Page - Integrated Silicon Solution, Inc

Part No. 61LV25616AL
Description  256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
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Maker  ISSI [Integrated Silicon Solution, Inc]
Homepage  http://www.issi.com
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 5 page
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Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
5
Rev. A
02/21/03
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IS61LV25616AL
ISSI®
CAPACITANCE(1)
Symbol
Parameter
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 0V
6
pF
COUT
Input/Output Capacitance
VOUT = 0V
8
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
-10
-12
Symbol Parameter
Test Conditions
Min. Max.
Min. Max.
Unit
ICC
VDD Dynamic Operating
VDD = Max.,
Com.
100
90
mA
Supply Current
IOUT = 0 mA, f = fMAX
Ind.
110
100
ISB
TTL Standby Current
VDD = Max.,
Com.
50
45
mA
(TTL Inputs)
VIN = VIH or VIL
Ind.
55
50
CE
≥ VIH, f = fMAX.
ISB1
TTL Standby Current
VDD = Max.,
Com.
20
20
mA
(TTL Inputs)
VIN = VIH or VIL
Ind.
25
25
CE
≥ VIH, f = 0
ISB2
CMOS Standby
VDD = Max.,
Com.
15
15
mA
Current (CMOS Inputs)
CE
≥ VDD – 0.2V,
Ind.
20
20
VIN
≥ VDD – 0.2V, or
VIN
≤ 0.2V, f = 0
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
Shaded area product in development




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