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61LV25616AL Datasheet(PDF) 4 Page - Integrated Silicon Solution, Inc

Part No. 61LV25616AL
Description  256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
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Maker  ISSI [Integrated Silicon Solution, Inc]
Homepage  http://www.issi.com
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 4 page
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Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. A
02/21/03
IS61LV25616AL
ISSI®
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
VOH
Output HIGH Voltage
VDD = Min., IOH = –4.0 mA
2.4
V
VOL
Output LOW Voltage
VDD = Min., IOL = 8.0 mA
0.4
V
VIH
Input HIGH Voltage
2.0
VDD + 0.3
V
VIL
Input LOW Voltage(1)
–0.3
0.8
V
ILI
Input Leakage
GND
≤ VIN ≤ VDD
Com.
–2
2
µA
Ind.
–5
5
ILO
Output Leakage
GND
≤ VOUT ≤ VDD
Com.
–2
2
µA
Outputs Disabled
Ind.
–5
5
Notes:
1. VIL (min.) = –2.0V for pulse width less than 10 ns.
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Parameter
Value
Unit
VTERM
Terminal Voltage with Respect to GND
–0.5 to VDD+0.5
V
TSTG
Storage Temperature
–65 to +150
°C
PT
Power Dissipation
1.0
W
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of
the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
OPERATING RANGE
VDD
Range
Ambient Temperature
10ns
12ns
Commercial
0°C to +70°C
3.3V +10%, -5%
3.3V + 10%
Industrial
–40°C to +85°C
3.3V +10%, -5%
3.3V + 10%




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