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GBJ35B Datasheet(PDF) 1 Page - GeneSiC Semiconductor, Inc.

Part # GBJ35B
Description  High surge current capability
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Manufacturer  GENESIC [GeneSiC Semiconductor, Inc.]
Direct Link  http://www.genesicsemi.com/
Logo GENESIC - GeneSiC Semiconductor, Inc.

GBJ35B Datasheet(HTML) 1 Page - GeneSiC Semiconductor, Inc.

  GBJ35B Datasheet HTML 1Page - GeneSiC Semiconductor, Inc. GBJ35B Datasheet HTML 2Page - GeneSiC Semiconductor, Inc. GBJ35B Datasheet HTML 3Page - GeneSiC Semiconductor, Inc.  
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VRRM = 100 V - 400 V
IO = 35 A
Features
GBJ Package
• Small size, high heat-conducting performance
• Thermal welding performance: 260
oC/10 s
• Weight: 7.25 g (0.25 Oz)
• Not ESD Sensitive
Parameter
Symbol
Unit
GBJ35B thru GBJ35G
• Compliant with RoHS Provisions
Single Phase Glass Passivated
Silicon Bridge Rectifier
• Types from 100 V to 400 V VRRM
• Epoxy Resin material compliant with 94V-0 standards
of UL Material Flammability Provisions
• High surge current capability
• Single in-line DIP package, compact size
• Low forward voltage, high forward current
GBJ35B
GBJ35D
Maximum ratings at TA = 25 °C (ambient temperature), unless otherwise specified
Conditions
GBJ35G
Repetitive peak reverse voltage
VRRM
V
DC blocking voltage
VDC
V
Operating temperature
Tj
°C
Storage temperature
Tstg
°C
Parameter
Symbol
Unit
Maximum forward surge current
IFSM
A
Maximum forward voltage
Insulation strengthg (Lead wire
to case)
Vdis
kV
Fusing feature
I
2t
A
2s
RΘJA
RΘJC
Mounting torgue
TOR
Nm
conductive sillica gel in moderation, use M3 screw to screw up. Recommended heatsink size: 19.0*19.0*7.6 cm.
Remarks: (1) Install on PCB with stated size heat sink. In order to reach excellent heat dissipation performance, please coat thermal
1.0 ( 0.8 Nm is recomended )
(2) Install on PCB without heatsink.
28
(2)
1.0
(1)
28
(2)
1.0
(1)
oC/W
Thermal resistance
without heatsink
with stated size heatsink
28
(2)
1.0
(1)
2.5
1ms ≤ t < 10ms, Tj=25 °C
410
410
410
200
100
AC Voltage: 1 minute,
current leakage < 1 mA
2.5
2.5
A
TA = 25 °C
6.8
(2)
6.8
(2)
6.8
(2)
500
500
35
(1)
-50 to 150
-50 to 150
GBJ35B
GBJ35D
1.05
5
1.05
1.05
5
Max. reverse current leakage at
rated DC blocking voltage
IR
VF
TA = 125 °C
8.3 ms pulse width,
single pulse sine-wave,
rated load, Tj = 25 °C
μA
TA = 25 °C
IF = 17.5 A
V
Conditions
Resistive load, single phase, half sine wave, 60 Hz.
-50 to 150
For capacitive load derate current by 20%.
TC = 98 °C
35
(1)
35
(1)
500
500
500
-50 to 150
-50 to 150
GBJ35G
Electrical characteristics at TA = 25 °C, unless otherwise specified
500
5
100
200
400
Maximum average forward
rectified current
-50 to 150
IO
400
Apr 2016
Latest version of this datasheet at: www.genesicsemi.com/silicon-products/bridge-rectifiers/
1


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