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GBJ35B Datasheet(PDF) 1 Page - GeneSiC Semiconductor, Inc. |
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GBJ35B Datasheet(HTML) 1 Page - GeneSiC Semiconductor, Inc. |
1 / 3 page VRRM = 100 V - 400 V IO = 35 A Features GBJ Package • Small size, high heat-conducting performance • Thermal welding performance: 260 oC/10 s • Weight: 7.25 g (0.25 Oz) • Not ESD Sensitive Parameter Symbol Unit GBJ35B thru GBJ35G • Compliant with RoHS Provisions Single Phase Glass Passivated Silicon Bridge Rectifier • Types from 100 V to 400 V VRRM • Epoxy Resin material compliant with 94V-0 standards of UL Material Flammability Provisions • High surge current capability • Single in-line DIP package, compact size • Low forward voltage, high forward current GBJ35B GBJ35D Maximum ratings at TA = 25 °C (ambient temperature), unless otherwise specified Conditions GBJ35G Repetitive peak reverse voltage VRRM V DC blocking voltage VDC V Operating temperature Tj °C Storage temperature Tstg °C Parameter Symbol Unit Maximum forward surge current IFSM A Maximum forward voltage Insulation strengthg (Lead wire to case) Vdis kV Fusing feature I 2t A 2s RΘJA RΘJC Mounting torgue TOR Nm conductive sillica gel in moderation, use M3 screw to screw up. Recommended heatsink size: 19.0*19.0*7.6 cm. Remarks: (1) Install on PCB with stated size heat sink. In order to reach excellent heat dissipation performance, please coat thermal 1.0 ( 0.8 Nm is recomended ) (2) Install on PCB without heatsink. 28 (2) 1.0 (1) 28 (2) 1.0 (1) oC/W Thermal resistance without heatsink with stated size heatsink 28 (2) 1.0 (1) 2.5 1ms ≤ t < 10ms, Tj=25 °C 410 410 410 200 100 AC Voltage: 1 minute, current leakage < 1 mA 2.5 2.5 A TA = 25 °C 6.8 (2) 6.8 (2) 6.8 (2) 500 500 35 (1) -50 to 150 -50 to 150 GBJ35B GBJ35D 1.05 5 1.05 1.05 5 Max. reverse current leakage at rated DC blocking voltage IR VF TA = 125 °C 8.3 ms pulse width, single pulse sine-wave, rated load, Tj = 25 °C μA TA = 25 °C IF = 17.5 A V Conditions Resistive load, single phase, half sine wave, 60 Hz. -50 to 150 For capacitive load derate current by 20%. TC = 98 °C 35 (1) 35 (1) 500 500 500 -50 to 150 -50 to 150 GBJ35G Electrical characteristics at TA = 25 °C, unless otherwise specified 500 5 100 200 400 Maximum average forward rectified current -50 to 150 IO 400 Apr 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/bridge-rectifiers/ 1 |
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Similar Description - GBJ35B |
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