4GBU Series

2

Bulletin I2717 rev. G 05/02

www.irf.com

I

O

Maximum DC output current

4

A

T

3.2

I

FSM

Maximum peak, one-cycle

150

t = 10ms

non-repetitive surge current,

following any rated load condition

158

t = 8.3ms

T

113

t = 10ms

initial T

104

t = 8.3ms

V

FM

Maximum peak forward voltage

1.0

V

T

o

C, I

per diode

Typical peak reverse leakage

5

µA

T

o

curren t per diode

Maximum repetitive peak

50 to 800

V

reversevoltagerange

Forward Conduction

Voltage

V

V

I

I

Type number

Code

peak rev. voltage

voltage

@ rated V

RRM

@ rated V

RRM

T

T

T

T

V

V

µA

µA

4GBU

005

50

35

5

400

4GBU...F

01

100

70

5

400

02

200

140

5

400

04

400

280

5

400

06

600

420

5

400

08

800

560

5

400

ELECTRICAL SPECIFICATIONS

Voltage Ratings

Parameters

4GBU

Unit

Conditions

T

J

Operatingandstorage

-55 to 150

o

C

temperature range

R

thJC

Max. thermal resistance

4.2

°C/ W

DC rated current through bridge (1)

junction to case

R

thJA

Thermal resistance,

22

°C/ W

DC rated current through bridge (1)

junction to ambient

W

Approximateweight

4 (0.14)

g(oz)

T

MountingTorque

1.0

Nm

Bridge to Heatsink

9.0

Lb.in

Thermal and Mechanical Specifications

Parameters

4GBU

Unit

Conditions

Note (1): Devices mounted on 40x 40x1.5mm aluminum plate; use silicon thermal compound for maximum

heat transfer and bolt down using 3mm screw