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EMH11 Datasheet(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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EMH11 Datasheet(HTML) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
1 / 3 page JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD EMH11 FEATURES Two DTC1 14E chips in a package Mounting possible with SOT-563 automatic mounting machines Transistor elements are independent, eliminating interference Mounting cost and area be cut in half Marking: H11 Absolute maximum ratings(Ta=25 ℃) Parameter Symbol Value Unit Supply voltage VCC 50 V Input voltage VIN - 10~40 V IO 50 Output current IC(MAX) 100 mA Power dissipation Pd 150 mW Junction temperature Tj 150 ℃ Storage temperature Tstg -55~ +150 ℃ Electrical characteristics (Ta=25 ℃) Parameter Symbol Min. Typ Max. Unit Conditions VI(off) 0.5 VCC=5V, IO=100μA Input voltage VI(on) 3 V VO=0.3V, IO= 10mA Output voltage VO(on) 0.3 V IO/II= 10mA/0.5mA Input current II 0.88 mA VI=5V Output current IO(off) 0.5 μA VCC=50V, VI=0 DC current gain GI 30 VO=5V, IO= 5mA Input resistance R1 7 10 13 kΩ - Resistance ratio R2/R1 0.8 1 1.2 - Transition frequency fT 250 MHz VCE=10V, IO=5mA, f=100MHz JC T SOT-563 Dual Digital Transistors (NPN+NPN) www.cj-elec.com 1 C,May,2015 www.cj-elec.com Digital Transistors (Built-in Resistors) |
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