MBR40045CTS datasheet(1/3 Pages) GENESIC

Part #	MBR40045CTS

Description	High Surge Capability

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Manufacturer	GENESIC [GeneSiC Semiconductor, Inc.]

Direct Link	http://www.genesicsemi.com/

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MBR40045CTS

Mar 2012

http://www.genesicsemi.com/silicon-products/schottky-rectifiers/

Pg1 of 3

Silicon Power

Schottky Diode

Features

Package

 High Surge Capability

SOT

– 227

Maximum Ratings at Tj = 125 °C, unless otherwise specified

Parameter

Symbol

Conditions

Values

Unit

Repetitive peak reverse voltage

VRRM

45

V

RMS reverse voltage

VRMS

32

V

DC blocking voltage

VDC

45

V

Continuous forward current

IF

TC ≤ 85 °C

400

A

Operating temperature

Tj

-40 to 175

°C

Storage temperature

Tstg

-40 to 175

°C

Electrical Characteristics at Tj = 125 °C, unless otherwise specified (Per Leg)

Parameter

Symbol

Conditions

Values

Unit

min.

typ.

max.

Diode forward voltage

VF

IF = 200 A, Tj = 25 °C

1.1

1.2

V

IF = 200 A, Tj = 125 °C

1

Reverse current

IR

VR = 36 V, Tj = 25 °C

1.2

5

µA

VR = 36 V, Tj = 125 °C

835

2500

Total capacitance

C

VR = 1 V, f = 1 MHz, Tj = 25 °C

4910

pF

VR = 20 V, f = 1 MHz, Tj = 25 °C

1399

VR = 45 V, f = 1 MHz, Tj = 25 °C

1032

Thermal Characteristics

Thermal resistance, junction - case

RthJC

2.16

°C/W

Figure 1: Typical Forward Characteristics(Per Leg)

Figure 2: Typical Reverse Characteristics(Per Leg)

VRRM

=

45 V

IF

=

400 A

Pin 2

Pin 1

Pin 4

Pin 3

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