MBR30035CTL datasheet(1/3 Pages) GENESIC

Part #	MBR30035CTL

Description	Not ESD Sensitive

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Manufacturer	GENESIC [GeneSiC Semiconductor, Inc.]

Direct Link	http://www.genesicsemi.com/

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VRRM = 35 V

IF(AV) = 300 A

Features

• High Surge Capability

Twin Tower Package

• Type 35 V VRRM

• Not ESD Sensitive

Parameter

MBR30035CT(R)L Unit

35

V

25

V

35

V

M i

DC bl ki

lt

Conditions

Symbol

VRRM

VRMS

V

Maximum recurrent peak reverse voltage

Maximum RMS voltage

MBR30035CT(R)L

Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)

Low VF Silicon Power

Schottky Diode

35

V

-55 to 150

°C

-55 to 150

°C

Parameter

MBR30035CT(R)L Unit

300

A

2000

A

0.60

3

150

Thermal characteristics

Maximum thermal resistance,

junction - case

(per leg)

0.40

°C/W

R

ΘJC

Average forward current (per pkg)

Maximum instantaneous forward voltage (per

leg)

Maximum instantaneous reverse

current at rated DC blocking voltage

(per leg)

IR

Tj = 100 °C

tp = 8.3 ms, half sine

IFSM

Peak forward surge current

(per leg)

IFM = 150 A, Tj = 25 °C

Tj = 25 °C

IF(AV)

VF

Maximum DC blocking voltage

Operating temperature

Storage temperature

TC = 100 °C

VDC

Tj

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Conditions

Tstg

Symbol

V

mA

www.genesicsemi.com/silicon-products/schottky-rectifiers/

1

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MBR30035CTL Datasheet(PDF) 1 Page - GeneSiC Semiconductor, Inc.

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