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MBR30035CTL Datasheet(PDF) 1 Page - GeneSiC Semiconductor, Inc. |
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MBR30035CTL Datasheet(HTML) 1 Page - GeneSiC Semiconductor, Inc. |
1 / 3 page VRRM = 35 V IF(AV) = 300 A Features • High Surge Capability Twin Tower Package • Type 35 V VRRM • Not ESD Sensitive Parameter MBR30035CT(R)L Unit 35 V 25 V 35 V M i DC bl ki lt Conditions Symbol VRRM VRMS V Maximum recurrent peak reverse voltage Maximum RMS voltage MBR30035CT(R)L Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Low VF Silicon Power Schottky Diode 35 V -55 to 150 °C -55 to 150 °C Parameter MBR30035CT(R)L Unit 300 A 2000 A 0.60 3 150 Thermal characteristics Maximum thermal resistance, junction - case (per leg) 0.40 °C/W R ΘJC Average forward current (per pkg) Maximum instantaneous forward voltage (per leg) Maximum instantaneous reverse current at rated DC blocking voltage (per leg) IR Tj = 100 °C tp = 8.3 ms, half sine IFSM Peak forward surge current (per leg) IFM = 150 A, Tj = 25 °C Tj = 25 °C IF(AV) VF Maximum DC blocking voltage Operating temperature Storage temperature TC = 100 °C VDC Tj Electrical characteristics, at Tj = 25 °C, unless otherwise specified Conditions Tstg Symbol V mA www.genesicsemi.com/silicon-products/schottky-rectifiers/ 1 |
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