NLU1GT86MUTCG datasheet(3/5 Pages) ONSEMI

Part #	NLU1GT86MUTCG

Description	Single 2-Input Exclusive OR Gate, TTL Level

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NLU1GT86

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DC ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Conditions

VCC (V)

TA = 25 5C

TA = +855C

TA = −555C

to +1255C

Unit

Min

Typ

Max

Min

Max

Min

Max

VIH

Low−Level Input

Voltage

3.0

4.5 to 5.5

1.4

2.0

1.4

2.0

1.4

2.0

V

VIL

Low−Level Input

Voltage

3.0

4.5 to 5.5

0.53

0.8

0.53

0.8

0.53

0.8

V

VOH

High−Level Output

Voltage

VIN = VIH or VIL

IOH = −50 mA

3.0

4.5

2.9

4.4

3.0

4.5

2.9

4.4

2.9

4.4

V

VIN = VIH or VIL

IOH = −4 mA

IOH = −8 mA

3.0

4.5

2.58

3.94

2.48

3.80

2.34

3.66

VOL

Low−Level Output

Voltage

VIN = VIH or VIL

IOL = 50 mA

3.0

4.5

0.0

0.1

V

VIN = VIH or VIL

IOL = 4 mA

IOL = 8 mA

3.0

4.5

0.36

0.44

0.52

IIN

Input Leakage

Current

0 v VIN v 5.5 V

0 to 5.5

±0.1

±1.0

mA

ICC

Quiescent Supply

Current

0 v VIN v VCC

5.5

1.0

20

40

mA

ICCT

Quiescent Supply

Current

VIN = 3.4 V

5.5

1.35

1.50

1.65

mA

IOPD

Output Leakage

Current

VOUT = 5.5 V

0.0

0.5

5.0

10

mA

AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns)

Symbol

Parameter

VCC

(V)

Test

Condition

TA = 25 5C

TA = +855C

TA = −555C

to +1255C

Unit

Min

Typ

Max

Min

Max

Min

Max

tPLH,

tPHL

Propagation Delay, Input A to

Output Y

3.0 to

3.6

CL = 15 pF

5.0

11.0

13.0

15.5

ns

CL = 50 pF

6.2

14.5

16.5

19.5

4.5 to

5.5

CL = 15 pF

3.1

6.8

6.0

10.0

CL = 50 pF

4.2

8.8

10.0

12.0

CIN

Input Capacitance

5.5

10

10.0

pF

CPD

Power Dissipation

Capacitance (Note 6)

5.0

11

pF

6. CPD is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without

load. Average operating current can be obtained by the equation ICC(OPR) = CPD • VCC • fin + ICC. CPD is used to determine the no−load

dynamic power consumption: PD = CPD • VCC2 • fin + ICC • VCC.

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