2SC5716

2001-11-27

1

TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type

2SC5716

Horizontal Deflection Output for High Resolution Display,

Color TV

· Collector metal (fin) is fully covered with mold resin.

==== 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

1700

V

Collector-emitter voltage

700

V

Emitter-base voltage

5

V

DC

8

Collector current

Pulse

16

A

Base current

4

A

Collector power dissipation

55

W

Junction temperature

150

°C

Storage temperature range

-55~150

°C

Equivalent Circuit

==== 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

¾

¾

1

mA

Emitter cut-off current

83

¾

250

mA

Emitter-base breakdown voltage

5

¾

¾

V

6

¾

20

DC current gain

3.8

¾

9

¾

Collector-emitter saturation voltage

¾

¾

5

V

Base-emitter saturation voltage

¾

0.9

1.2

V

Forward voltage (damper diode)

¾

1.3

1.8

V

Transition frequency

¾

2

¾

MHz

Collector output capacitance

¾

180

¾

pF

Storage time

¾

6

8

Fall time

¾

0.3

0.6

Storage time

3.5

5

Switching time

Fall time

¾

0.2

0.35

ms

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-16E3A

Weight: 5.5 g (typ.)

1. Base

40

W (typ.)

3. Emitter

2. Collector