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MC74VHC86DTG Datasheet(PDF) 3 Page - ON Semiconductor

Part # MC74VHC86DTG
Description  Quad 2-Input XOR Gate
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MC74VHC86DTG Datasheet(HTML) 3 Page - ON Semiconductor

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MC74VHC86
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3
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
VCC
V
TA = 25°C
TA = −55°C to +125°C
Unit
Min
Typ
Max
Min
Max
VIH
High−Level Input
Voltage
2.0
3.0 to
5.5
1.50
VCC x 0.7
1.50
VCC x 0.7
V
VIL
Low−Level Input
Voltage
2.0
3.0 to
5.5
0.50
VCC x 0.3
0.50
VCC x 0.3
V
VOH
High−Level Output
Voltage
Vin = VIH or VIL
IOH = −50 mA
2.0
3.0
4.5
1.9
2.9
4.4
2.0
3.0
4.5
1.9
2.9
4.4
V
Vin = VIH or VIL
IOH = −4 mA
IOH = −8 mA
3.0
4.5
2.58
3.94
2.48
3.80
VOL
Low−Level Output
Voltage
Vin = VIH or VIL
IOL = 50 mA
2.0
3.0
4.5
0
0
0
0.1
0.1
0.1
0.1
0.1
0.1
V
Vin = VIH or VIL
IOL = 4 mA
IOL = 8 mA
3.0
4.5
0.36
0.36
0.44
0.44
Iin
Input Leakage Current
Vin = 5.5 V or GND
0 to 5.5
±0.1
±1.0
mA
ICC
Quiescent Supply
Current
Vin = VCC or GND
5.5
2.0
20.0
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0ns)
Symbol
Parameter
Test Conditions
TA = 25°C
TA = −55°C to
+125
°C
Unit
Min
Typ
Max
Min
Max
tPLH,
tPHL
Propagation Delay, A or B to Y
VCC = 3.3 ± 0.3 V
CL = 15 pF
CL = 50 pF
7.0
9.5
11.0
14.5
1.0
1.0
13.0
16.5
ns
VCC = 5.0 ± 0.5 V
CL = 15 pF
CL = 50 pF
4.8
6.3
6.8
8.8
1.0
1.0
8.0
10.0
Cin
Input Capacitance
4
10
10
pF
CPD
Power Dissipation Capacitance (Note 1.)
Typical @ 25
°C, VCC = 5.0 V
pF
18
1. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD  VCC  fin + ICC / 4 (per gate). CPD is used to determine the
no−load dynamic power consumption; PD = CPD  VCC2  fin + ICC  VCC.
NOISE CHARACTERISTICS (Input tr = tf = 3.0ns, CL = 50 pF, VCC = 5.0 V, Measured in SOIC Package)
Symbol
Characteristic
TA = 25°C
Unit
Typ
Max
VOLP
Quiet Output Maximum Dynamic VOL
0.3
0.8
V
VOLV
Quiet Output Minimum Dynamic VOL
−0.3
−0.8
V
VIHD
Minimum High Level Dynamic Input Voltage
3.5
V
VILD
Maximum Low Level Dynamic Input Voltage
1.5
V


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