For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824

Phone: 978-250-3343

Fax: 978-250-3373

Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

5

HMC498

v03.0713

GaAs pHEMT MMIC

POWER AMPLIFIER, 17 - 24 GHz

Assembly Diagram

Pad Descriptions

Pad Number

Function

Description

Interface Schematic

1

RFIN

This pad is AC coupled and matched to 50 Ohms.

2 - 4

Vdd1, Vdd2, Vdd3

Power Supply Voltage for the amplifier. External bypass

capacitors of 100 pF and 0.01 µF are required.

5

RFOUT

This pad is AC coupled and matched to 50 Ohms.

6

Vgg

Gate control for amplifier. Adjust to achieve Idd of 250mA.

Please follow “MMIC Amplifier Biasing Procedure” Appli-

cation Note. External bypass capacitors of 100 pF and 0.01

µF are required.

Die Bottom

GND

Die bottom must be connected to RF/DC ground.