SQM25N15-52-GE3 datasheet(2/10 Pages) VISHAY

Part #	SQM25N15-52-GE3

Description	Automotive P-Channel 60 V (D-S) 175 MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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SQM120P06-07L

www.vishay.com

Vishay Siliconix

S12-1847-Rev. B, 30-Jul-12

2

Document Number: 67026

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Pulse test; pulse width

 300 μs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

c. Independent of operating temperature.



Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.



SPECIFICATIONS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = - 250 μA

- 60

-

V

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 μA

- 1.5

- 2.0

- 2.5

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

-

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V

VDS = - 60 V

-

- 1

μA

VGS = 0 V

VDS = - 60 V, TJ = 125 °C

-

- 50

VGS = 0 V

VDS = - 60 V, TJ = 175 °C

-

- 250

On-State Drain Currenta

ID(on)

VGS = - 10 V

VDS- 5 V

- 120

-

A

Drain-Source On-State Resistancea

RDS(on)

VGS = - 10 V

ID = - 30 A

-

0.0056

0.0067



VGS = - 10 V

ID = - 30 A, TJ = 125 °C

-

0.0110

VGS = - 10 V

ID = - 30 A, TJ = 175 °C

-

0.0130

VGS = - 4.5 V

ID = - 20 A

-

0.0070

0.0088

Forward Transconductanceb

gfs

VDS = - 15 V, ID = - 30 A

-

90

-

S

Dynamicb

Input Capacitance

Ciss

VGS = 0 V

VDS = - 25 V, f = 1 MHz

-

11 423

14 280

pF

Output Capacitance

Coss

-

1034

1295

Reverse Transfer Capacitance

Crss

-

809

1015

Total Gate Chargec

Qg

VGS = - 10 V

VDS = - 30 V, ID = - 110 A

-

180

270

nC

Gate-Source Chargec

Qgs

-31

-

Gate-Drain Chargec

Qgd

-43

-

Gate Resistance

Rg

f = 1 MHz

1.1

2.27

3.5



Turn-On Delay Timec

td(on)

VDD = - 30 V, RL = 0.27 

ID  - 110 A, VGEN = - 10 V, Rg = 1 

-15

23

ns

Rise Timec

tr

-23

35

Turn-Off Delay Timec

td(off)

-

97

146

Fall Timec

tf

-32

48

Source-Drain Diode Ratings and Characteristicsb

Pulsed Currenta

ISM

-

- 480

A

Forward Voltage

VSD

IF = - 100 A, VGS = 0 V

-

- 0.95

- 1.5

V

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SQM25N15-52-GE3 Datasheet(PDF) 2 Page - Vishay Siliconix

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