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SQM25N15-52-GE3 Datasheet(PDF) 2 Page - Vishay Siliconix |
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SQM25N15-52-GE3 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 10 page SQM120P06-07L www.vishay.com Vishay Siliconix S12-1847-Rev. B, 30-Jul-12 2 Document Number: 67026 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 μA - 60 - - V Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 μA - 1.5 - 2.0 - 2.5 Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = - 60 V - - - 1 μA VGS = 0 V VDS = - 60 V, TJ = 125 °C - - - 50 VGS = 0 V VDS = - 60 V, TJ = 175 °C - - - 250 On-State Drain Currenta ID(on) VGS = - 10 V VDS- 5 V - 120 - - A Drain-Source On-State Resistancea RDS(on) VGS = - 10 V ID = - 30 A - 0.0056 0.0067 VGS = - 10 V ID = - 30 A, TJ = 125 °C - - 0.0110 VGS = - 10 V ID = - 30 A, TJ = 175 °C - - 0.0130 VGS = - 4.5 V ID = - 20 A - 0.0070 0.0088 Forward Transconductanceb gfs VDS = - 15 V, ID = - 30 A - 90 - S Dynamicb Input Capacitance Ciss VGS = 0 V VDS = - 25 V, f = 1 MHz - 11 423 14 280 pF Output Capacitance Coss - 1034 1295 Reverse Transfer Capacitance Crss - 809 1015 Total Gate Chargec Qg VGS = - 10 V VDS = - 30 V, ID = - 110 A - 180 270 nC Gate-Source Chargec Qgs -31 - Gate-Drain Chargec Qgd -43 - Gate Resistance Rg f = 1 MHz 1.1 2.27 3.5 Turn-On Delay Timec td(on) VDD = - 30 V, RL = 0.27 ID - 110 A, VGEN = - 10 V, Rg = 1 -15 23 ns Rise Timec tr -23 35 Turn-Off Delay Timec td(off) - 97 146 Fall Timec tf -32 48 Source-Drain Diode Ratings and Characteristicsb Pulsed Currenta ISM - - - 480 A Forward Voltage VSD IF = - 100 A, VGS = 0 V - - 0.95 - 1.5 V |
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