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SiHB21N65EF-GE3 Datasheet(PDF) 5 Page - Vishay Siliconix

Part # SiHB21N65EF-GE3
Description  E Series Power MOSFET with Fast Body Diode
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SiHB21N65EF-GE3 Datasheet(HTML) 5 Page - Vishay Siliconix

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SiHB21N65EF
www.vishay.com
Vishay Siliconix
S15-2686-Rev. A, 16-Nov-15
5
Document Number: 91606
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 12 - Normalized Thermal Transient Impedance, Junction-to-Case
Fig. 13 - Switching Time Test Circuit
Fig. 14 - Switching Time Waveforms
Fig. 15 - Unclamped Inductive Test Circuit
Fig. 16 - Unclamped Inductive Waveforms
Fig. 17 - Basic Gate Charge Waveform
Fig. 18 - Gate Charge Test Circuit
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
Pulse Time (s)
Duty Cycle = 0.5
0.2
0.1
0.02
Single Pulse
0.05
Pulse width
≤ 1 µs
Duty factor
≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
10 V
+
-
V
DS
V
DD
V
DS
90 %
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
R
G
IAS
0.01
Ω
tp
D.U.T
L
V
DS
+
-
V
DD
10 V
Vary tp to obtain
required IAS
IAS
VDS
VDD
VDS
tp
Q
GS
Q
GD
Q
G
VG
Charge
10 V
D.U.T.
3 mA
V
GS
V
DS
I
G
I
D
0.3 µF
0.2 µF
50 k
Ω
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-


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