SiHB21N65EF

www.vishay.com

Vishay Siliconix

S15-2686-Rev. A, 16-Nov-15

4

Document Number: 91606

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 8 - Typical Source-Drain Diode Forward Voltage

Fig. 9 - Maximum Safe Operating Area

Fig. 10 - Maximum Drain Current vs. Case Temperature

Fig. 11 - Temperature vs. Drain-to-Source Voltage

16

4

0

60

120

0

24

20

12

8

30

90

V

V

V

150

0.1

1

10

100

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

T

T

V

V

* V

I

BVDSS Limited

100 μs

1 ms

10 ms

Single Pulse

Limited by R

0.01

0.1

1

10

100

1

10

100

1000

Operation in this Area

Limited by R

DS(on)

5

10

15

20

25

25

50

75

100

125

150

0

- 60

0

160

- 40 - 20

20

40

60

80 100 120 140

650

675

700

725

750

775

800

825

850